Infrared and UV-visible spectra of layer semiconductors Gas, GaSe and GaTe

Giorgianni, U.; Mondio, G.; Perillo, P.; Saitta, G.; Vermiglio, G.

doi:10.1051/jphys:0197700380100129300

Cited by 21 publications

(5 citation statements)

References 29 publications

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“…Single nanowire absorption measurements by EELS (Figure 6(a−c)) show a characteristic energy loss onsetassociated with interband transitions across the fundamental bandgapat E g = 2.65 eV, close to the previously reported bandgap of GaS. 37,38 Features between 3 and 10 eV are likely associated with special points in the GaS dielectric function seen previously, 39,40 while the peak at ∼17 eV has been explained by an excitation of the GaS bulk plasmon. 8,41 At low energy (in the gap region), the spectra show structure with intensity above the noise level whose energy coincides with emission features observed in CL (see below), i.e., which may be associated with losses due to transitions between gap states.…”

Section: Resultssupporting

confidence: 86%

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

et al. 2020

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Nanowires of layered van der Waals (vdW) crystals are of interest due to structural characteristics and emerging properties that have no equivalent in conventional 3D crystalline nanostructures. Here, vapor−liquid−solid growth, optoelectronics, and photonics of GaS vdW nanowires are studied. Electron microscopy and diffraction demonstrate the formation of high-quality layered nanostructures with different vdW layer orientation. GaS nanowires with vdW stacking perpendicular to the wire axis have ribbon-like morphologies with lengths up to 100 μm and uniform width. Wires with axial layer stacking show tapered morphologies and a corrugated surface due to twinning between successive few-layer GaS sheets. Layered GaS nanowires are excellent wide-bandgap optoelectronic materials with E g = 2.65 eV determined by single-nanowire absorption measurements. Nanometer-scale spectroscopy on individual nanowires shows intense blue band-edge luminescence along with longer wavelength emissions due to transitions between gap states and photonic properties such as interference of confined waveguide modes propagating within the nanowires. The combined results show promise for applications in electronics, optoelectronics, and photonics, as well as photo-or electrocatalysis owing to a high density of reactive edge sites, and intercalation-type energy storage benefiting from facile access to the interlayer vdW gaps.

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Section: Resultssupporting

confidence: 86%

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

et al. 2020

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“…Only a strong in-plane E peak is visible in the range of 213−215 cm −1 . In the bulk case this peak is slightly shifted toward 212 cm −1 close to the peak found in experimental GaSe spectra [45]. Interestingly, we also predict a peak related to the out-of-plane A 2 mode close to 243 cm −1 .…”

Section: Raman and Ir Spectrasupporting

confidence: 82%

Lattice vibrations and electronic properties of GaSe nanosheets from first principles

Bejani

Pulci

Barvestani

et al. 2019

Phys. Rev. Materials

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Electronic properties and lattice dynamics of bulk ε-GaSe and one, two and three tetralayers GaSe are investigated by means of density functional and density functional perturbation theory. The fewtetralayers systems are semiconductors with an indirect nature of the fundamental band gap and a Mexican-hat-shape is observed at the top of the valence band. The phonon branches analysis reveals the dynamical stability for all systems considered together with the LO-TO splitting breakdown in two-dimensional systems. In-plane (E) and out-of-plane (A) zone-center lattice vibrations dominate the Raman and IR spectra. 132 132 132

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“…The observed tendency can possibly be explained by the different work functions of these metal chalcogenides in the bulk state and most probably in the 1D state [34]. These compounds also have large difference in the band gaps in the bulk state; the values of SnS, GaTe, and Bi 2 Se 3 are 1.3 eV [60], 1.7 eV [61], and 0.3 eV [62], respectively. Gallium telluride has large band gap, and the work function of this chemical compounds is larger than the one of the pristine SWCNTs.…”

Section: Figures 3a and B Demonstrate The Rbm-and G-bands Ofmentioning

confidence: 96%

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Kharlamova

2014

J Mater Sci

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In the present work, the channels of singlewalled carbon nanotubes (SWCNTs) were filled with tin sulfide (SnS), gallium telluride (GaTe), and bismuth selenide (Bi 2 Se 3 ). The successful encapsulation of the compounds was proven by high-resolution transmission electron microscopy. The electronic properties of the filled SWCNTs were studied by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the embedded metal chalcogenides have different influence on the electronic properties of the nanotubes. The incorporation of tin sulfide into the SWCNTs does not result in sufficient changes in the electronic structure of SWCNTs, except for a minor influence on metallic nanotubes. The filling of SWCNTs with gallium telluride causes the charge transfer from the SWCNT walls to the encapsulated compound due to acceptor doping of the nanotubes. The insertion of bismuth selenide inside the SWCNT channels does not lead to the modification of the electronic properties of nanotubes.

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Infrared and UV-visible spectra of layer semiconductors Gas, GaSe and GaTe

Cited by 21 publications

References 29 publications

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

Vapor–Liquid–Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

Lattice vibrations and electronic properties of GaSe nanosheets from first principles

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

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