Infrared Colloidal Quantum Dot Image Sensors

Pejović, Vladimir; Georgitzikis, Epimitheas; Lee, Jiwon; Lieberman, Itai; Cheyns, David; Heremans, Paul; Malinowski, Paweł E.

doi:10.1109/ted.2021.3133191

Cited by 71 publications

(51 citation statements)

References 55 publications

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“…This value is certainly modest compared to the best performing single pixel devices (with EQE reaching 80% for diodes 32 and even higher for devices with gain 43 ). On the other hand, there are very few reported EQE values at the FPA level, 18 especially based on HgTe QDs. Buurma et al 16 reported a 0.64% EQE, for a 320 × 256 pixel array with a 30 μm pixel pitch, but the cut-off wavelength was also much longer (5 μm) and operation was conducted at cryogenic temperature (100 K).…”

Section: Discussion and Resultsmentioning

confidence: 99%

“…2,11–14 For the latter application, most of the efforts have been focused on the design of single pixel devices, but there are few reports relative to image sensors. 12,15–19 Several companies (such as SWIR Vision, 20–22 ST Microelectronics, 23 IMEC, 1,24–26 Emberion, 27 QDIR, Osram) are now developing or even commercializing nanocrystal-based cameras.…”

Section: Introductionmentioning

confidence: 99%

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Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Gréboval

Darson

Parahyba³

et al. 2022

Nanoscale

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Section: Discussion and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Gréboval

Darson

Parahyba³

et al. 2022

Nanoscale

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“…Especially at short‐wave infrared (SWIR) wavelengths, that is, 1000 − 3000 nm, the possibility to directly print QD photodiodes (QDPDs) on silicon read‐out circuits makes for a unique path to create SWIR image sensors at far lower cost and smaller pixel pitch than current wafer‐bonding approaches. [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ] Current SWIR QDPDs consist of multilayer stacks that include PbS or HgTe QDs as the photo‐active layer. In line with the extensive work on single‐junction QD solar cells, charges are separated in such stacks either at the heterojunction formed between the QD film and one of the charge‐transport layers or through an internal pn junction formed within the QD film.…”

Section: Introductionmentioning

confidence: 99%

Colloidal III–V Quantum Dot Photodiodes for Short‐Wave Infrared Photodetection

et al. 2022

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Short‐wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD‐SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non‐restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one‐size‐one‐batch reaction and feature a band‐edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post‐processed to obtain In(As,P) nanocolloids stabilized by short‐chain ligands, from which semiconducting films of n‐In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p‐NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.

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“…[ 13,14 ] Several companies have already commercialized CQD‐based imaging technology, offering products with a high external quantum efficiency (EQE), high resolution, and lower cost compared to traditional infrared FPAs. [ 5 ]…”

Section: Introductionmentioning

confidence: 99%

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range

Pejović

Georgitzikis

Lieberman

et al. 2022

Adv Funct Materials

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Multispectral imaging in short-wave infrared (SWIR) is a powerful analytical technique because of the distinctive spectral properties of many materials in this range. However, conventional SWIR image sensors are beyond the reach of many applications due to their high price. Image sensors based on colloidal quantum dots (CQDs) are expected to deliver affordable infrared image sensors to wider application scope. So far, the demonstrated CQD image sensors do not have a multispectral capability. Here, a dual-band photodetector based on PbS CQDs is presented. By engineering the surface of CQDs, two oppositely facing pn junctions are fabricated in series, which enable sensing in two spectral channels. Furthermore, an optical cavity is designed that reduces the spectral crosstalk between the two channels and simultaneously enables wavelength-tunability in one channel. Finally, an organic photodiode (OPD) is integrated with a PbS CQD photodiode in a single device, leveraging a high sensitivity in visible and near-infrared (NIR) characteristics for OPDs. The presented photodetectors exhibit low dark current below 500 nA cm −2 at 1 V bias, a fast response measured in microseconds, as well as high external quantum efficiency, reaching 70% in NIR and 30% in SWIR.

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Infrared Colloidal Quantum Dot Image Sensors

Cited by 71 publications

References 55 publications

Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging

Colloidal III–V Quantum Dot Photodiodes for Short‐Wave Infrared Photodetection

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range

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