HgTe nanocrystals, thanks to quantum confinement, present a broadly tunable band gap all over the infrared spectral range. In addition, significant efforts have been dedicated to the design of infrared...

Nanocrystals (NCs) have reached a high level of maturity, enabling their integration into optoelectronic devices. The next challenge is the combination of several types of devices into one complex system to achieve better on‐chip integration. Here, an all‐HgTe‐NC active imaging setup operating in the short‐wave infrared (IR) is focused on. First, the design of an optimized IR light‐emitting diode (LED) is focused on. It is shown that a halide technology processing enables an increase of the electroluminescence signal by a factor of 3, while preserving a low turn‐on voltage and a high brightness (3 W sr−1 m−2). Then the degradation mechanism of this LED under continuous operation is unveiled and a shift from band edge to trap emission is shown. This degradation process can be strongly reduced thanks to the encapsulation and the thermal control of the LED. Lastly, the IR emission of the LED is imaged using a focal plane array whose active layer is also made of HgTe NCs, paving the way for all‐NC‐based active imaging setups.

The trade-off between transmission performance and hardware implementation in application-specific integrated circuits of digital backpropagation (DBP) in coherent 32 GBd polarisation-division multiplexing 16 quadrature amplitude modulation is analysed. The reach is optimised for different DBP implementations under constraints of 16 and 28 nm complementary metal-oxide-semiconductor (CMOS) technology digital signal processing (DSP) area.

After the use of nanocrystals as light downconverters, infrared sensing appears to be one of the first market applications where they can be used while being both electrically and optically active. Over recent years, tremendous progress has been achieved, leading to an apparent rise in the technologicalreadiness level (TRL). So far, the efforts have been focused on PbS nanocrystals for operation in the near-infrared. Here, we focus on HgTe since its narrower band gap offers more flexibility to explore the extended short-wave and midwave infrared. We report a photoconductive strategy for the design of short-wave infrared focal plane arrays with enhanced image quality. An important aspect often swept under the rug at an early stage is the material stability. It appears that HgTe remains mostly unaffected by oxidation under air operation. The evaporation of Hg, a potentially dramatic aging process, only occurs at temperatures far beyond the focal plane array's standard working temperature. The main bottleneck appears to be the particle sintering resulting from joule heating of focal plane arrays. This suggests that a cooling system is required, whose first role is to prevent the material from sintering even before targeting dark current reduction.

We investigated the performance of a 1.12-Tb/s (5x224-Gb/s PDM-16QAM) superchannel with 6-b/s/Hz, using optical prefiltering, over hybrid LongLine-SSMF link with hybrid Raman-EDFA amplification and cascaded 175-GHz ROADMs. A maximum reach of 1000-km with 10-ROADM passes was obtained employing nonlinear compensation.