1998
DOI: 10.1021/la980439t
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Infrared External Reflection Spectroscopic Study on the Structures of a Conducting Langmuir−Blodgett Film of a Tetrathiafulvalene Derivative

Abstract: Infrared (IR) external reflection absorption spectroscopy was applied to study the structure and its change associated with iodine doping of a Langmuir-Blodgett (LB) film of a tetrathiafulvalene (TTF) derivative, 1,3-dithiole-4-carboxylic acid-2-(1,3-dithiol-2-ylidene)hexadecyl ester (HDTTF, Figure 1), prepared on a silicon wafer. The incidence angle ( ) dependence of the p-and s-polarized IR external reflection spectra were measured and analyzed by a theoretical calculation of reflection absorbance (Ap and As… Show more

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Cited by 7 publications
(2 citation statements)
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“…1523 cm -1 ) of the amide group of l -PL and dl -PL. R p and R s in eq 3 were calculated by following the procedure based on a three-layered model. ,, In the calculation, the complex refractive indices of water were taken from the literature to be 1.3193 + 0.1366i at 1640 cm -1 and 1.332 + 0.0382i at 1523 cm -1 , and the real part of the anisotropic optical constants of the amide I and II bands was assumed to be 1.5. The imaginary parts of the anisotropic optical constants, which should be expressed in terms of the orientation angles of the amide group, were calculated in the following manner.…”
Section: Methods Of Simulation Of Pm-iras Spectramentioning
confidence: 99%
“…1523 cm -1 ) of the amide group of l -PL and dl -PL. R p and R s in eq 3 were calculated by following the procedure based on a three-layered model. ,, In the calculation, the complex refractive indices of water were taken from the literature to be 1.3193 + 0.1366i at 1640 cm -1 and 1.332 + 0.0382i at 1523 cm -1 , and the real part of the anisotropic optical constants of the amide I and II bands was assumed to be 1.5. The imaginary parts of the anisotropic optical constants, which should be expressed in terms of the orientation angles of the amide group, were calculated in the following manner.…”
Section: Methods Of Simulation Of Pm-iras Spectramentioning
confidence: 99%
“…Além de substratos metálicos, a IRRAS também vem se tornando importante na caracterização de filmes finos depositados em semicondutores e isolantes [36][37][38][39][40][41] . A indústria dos semicondutores requer técnicas rápidas e não destrutivas para a análise de filmes finos depositados sobre pastilhas de sílicio durante a manufatura de circuitos integrados em controles rígidos do processo.…”
Section: Substratos Dielétricos E Semicondutoresunclassified