An atmospheric-pressure
plasma-enhanced spatial atomic layer deposition
(PE-s-ALD) process for SiO2 using bisdiethylaminosilane
(BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying
growth mechanism. Within the temperature range of 100–250 °C,
the process demonstrates self-limiting growth with a growth per cycle
(GPC) between 0.12 and 0.14 nm and SiO2 films exhibiting
material properties on par with those reported for
low-pressure PEALD. Gas-phase infrared spectroscopy on the reactant
exhaust gases and optical emission spectroscopy (OES) on the plasma
region are used to identify the species that are involved in the ALD
process. Based on the identified species, we propose a reaction mechanism
where BDEAS molecules adsorb on −OH surface sites through the
exchange of one of the amine ligands upon desorption of diethylamine
(DEA). The remaining amine ligand is removed through combustion reactions
activated by the O2 plasma species leading to the release
of H2O, CO2, and CO in addition to products
such as N2O, NO2, and CH-containing species.
These volatile species can undergo further gas-phase reactions in
the plasma as indicated by the observation of OH*, CN*, and NH* excited
fragments in OES. Furthermore, the infrared analysis of the precursor
exhaust gas indicated the release of CO2 during precursor
adsorption. Moreover, this analysis has allowed the quantification
of the precursor depletion yielding values between 10 and 50% depending
on the processing parameters. Besides providing insights into the
chemistry of atmospheric-pressure PE-s-ALD of SiO2, our
results demonstrate that infrared spectroscopy performed on exhaust
gases is a valuable approach to quantify relevant process parameters,
which can ultimately help evaluate and improve process performance.