The degree of in-plane molecular orientation of various polyimides
(PIs) and their precursors,
poly(amic acid)s (PAAs), were estimated by measuring the visible
dichroic absorption at an incidence
angle for a rod-like dye (perylenediimide, PEDI) dispersed in the
matrices. The effects of PI chain
structure, film thickness, heating rate, and residual solvent on a
spontaneous in-plane orientation
phenomenon were examined to fully understand the mechanism. All
PAA films cast on a substrate showed
the low degrees of in-plane orientation of the chain axis, nearly
independent of the chain structure. Upon
thermal imidization of the PAA films adhered on a substrate, a striking
spontaneous in-plane orientation
behavior was observed for some PI systems with rigid chains; in
contrast to that, some flexible PI systems
showed no spontaneous behavior. Cure of the PAA films adhered on a
substrate induced the spontaneous
orientation even if the films were considerably thick (∼50 μm); in
contrast to that, the cure of the free-standing thick film did not. However, upon cure of the
free-standing thin films (∼10 μm), the spontaneous
orientation behavior was observed. For rigid PI systems in which
interchain stacking preferentially occurs,
thermal cure of the PAA films on a substrate forms liquid-crystal-like
highly oriented regions, and
simultaneously, apparent stretching (due to constraint of film
contraction during imidization) promotes
the molecular orientation further. The mechanism is closely
associated with a “cooperative effect” in
which the neighboring chains enhance the molecular orientation of each
other during cure. In addition,
structural changes (orientations of the chain axis and a molecular
plane and molecular packing) upon
stepwise annealing were followed. Polarized infrared absorption
spectra measured at an incidence angle
demonstrated that the phthalimide molecular plane in the PI film on a
silicon wafer aligns somewhat
parallel to the film plane, but no significant orientational and
conformational changes occurred upon
stepwise annealing.