Infrared Methods for Gas Detection

Crowder, John Graham; Smith, S. D.; Vass, A.; Keddie, Joseph L.

doi:10.1007/1-84628-209-8_18

Cited by 38 publications

(27 citation statements)

References 41 publications

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“…Such circuits can be valuable for spectroscopic sensing applications, which leverage the strong rovibrational absorption lines of molecules in the mid-infrared wavelength spectrum -the so-called molecular fingerprint region [2]. While silicon provides an excellent platform for passive waveguiding in this 1.1 -4 µm wavelength range [1,3], the generation and detection of mid-infrared radiation is not straightforward.…”

Section: Ocis Codes: (1303120) Integrated Optics Devices; (1900190)mentioning

confidence: 99%

Generation of 36 μm radiation and telecom-band amplification by four-wave mixing in a silicon waveguide with normal group velocity dispersion

et al. 2014

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Received Month X, XXXX; revised Month X, XXXX; accepted Month X, XXXX; posted Month X, XXXX (Doc.ID XXXXX); published Month X, XXXX Mid-infrared light generation through four-wave mixing-based frequency down-conversion in a normal group velocity dispersion silicon waveguide is demonstrated. A telecom-wavelength signal is down-converted across more than 1.2 octaves using a pump at 2190 nm in a 1cm long waveguide. At the same time 13dB parametric gain of the telecom signal is obtained. OCIS Codes: (130.3120) Integrated optics devices; (190.0190) Nonlinear optics;The broadband transparency of the silicon-on-insulator waveguide platform from 1.1µm (limited by the absorption of silicon) to ~4µm (limited by the absorption of SiO2) [1] enables the realization of photonic integrated circuits outside the telecommunication band. Such circuits can be valuable for spectroscopic sensing applications, which leverage the strong rovibrational absorption lines of molecules in the mid-infrared wavelength spectrum -the so-called molecular fingerprint region [2]. While silicon provides an excellent platform for passive waveguiding in this 1.1 -4 µm wavelength range [1,3], the generation and detection of mid-infrared radiation is not straightforward. Recent research has been geared towards the integration of III-V semiconductor devices onto the silicon photonics platform to implement this functionality [4,5]. However, mid-infrared semiconductor photodetectors suffer from poor sensitivity at room temperature due to their narrow band gap, while semiconductor light sources only offer a limited gain bandwidth and hence a limited emission wavelength range. Efficient nonlinear optical effects on the silicon photonic platform, making use of the instantaneous thirdorder χ(3) nonlinear effect, can provide a solution to many of these challenges. Recent work has shown that fourwave mixing-based nonlinear optical functions including supercontinuum generation [6], optical parametric amplification [7,8] and wavelength conversion [7][8][9][10] can be integrated for mid-infrared light generation within compact silicon photonic integrated circuits. Moreover, silicon waveguides accomplishing bi-directional broadband spectral translation of optical signals between 1620 nm and 2440 nm in the mid-infrared [11], and between 1312 nm and 1884 nm in the short-wave infrared [12] have been demonstrated using four-wave mixing phase matched by anomalous dispersion. Such spectral translation technology can be applied to mid-infrared spectroscopic functions on a silicon photonic integrated circuit, by using advanced telecom-wavelength laser sources and high-sensitivity photodetectors. In this paper, we demonstrate that by using silicon waveguides with normal dispersion, the range of mid-infrared light generation and spectral translation can be extended to 3.6 µm wavelength, by frequency down-conversion across 1.2 octaves from the telecom band.The spectral translator waveguide used in this work is dispersion engineered specifically to allow for phase matching far ...

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Section: Ocis Codes: (1303120) Integrated Optics Devices; (1900190)mentioning

confidence: 99%

Generation of 36 μm radiation and telecom-band amplification by four-wave mixing in a silicon waveguide with normal group velocity dispersion

et al. 2014

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“…Many gases and bio-molecules absorb strongly in the mid-infrared (2-12 μm) wavelength range. Organic compounds have characteristic absorption features in the 3 -4 μm wavelength range [2], and the detection and analysis of these compounds is of great importance for many practical applications. Both laser-based spectroscopy and dispersive spectrometers can be used for this purpose.…”

Section: Introductionmentioning

confidence: 99%

III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

Muneeb¹,

Vasiliev²,

Ruocco³

et al. 2016

Opt. Express

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Abstract:A compact (1.2 mm 2 ) fully integrated mid-IR spectrometer operating in the 3 μm wavelength range is presented. To our knowledge this is the longest wavelength integrated spectrometer operating in the important wavelength window for spectroscopy of organic compounds. The spectrometer is based on a silicon-on-insulator arrayed waveguide grating filter. An array of InAs 0.91 Sb 0.09 p-i-n photodiodes is heterogeneously integrated on the spectrometers output grating couplers using adhesive bonding. The spectrometer insertion loss is less than 3 dB and the waveguide-referred responsivity of the integrated photodiodes at room temperature is 0.3 A/W.

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“…An important factor defining the scope of potential applications for these ASPICs is the range of accessible wavelengths. The ASPICs operating in the mid-infrared wavelengths range beyond 2 μm are particularly interesting for the applications in gas spectroscopy [2]. This is related to the presence of absorption profiles of several gas species, for example, acetone, ammonia, carbon dioxide, water vapor, formaldehyde, diethylamine, ethylamine, and methylamine [3].…”

Section: Introductionmentioning

confidence: 99%

“…A trace analysis of such gas species is important in a wide range of applications including environmental monitoring in agriculture, process control in chemical and pharmaceutical plants and laboratories, atmospheric pollution monitoring, and for medical monitoring and diagnosis. Furthermore, the use of a monolithic photonic integration technology allows for the co-integration of several sources and detection subsystems on a single chip making it particularly attractive for multispecies gas detection systems where the complexity and size of bulk optics-based solutions are in many cases prohibitive factors [2,4].…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated widely tunable laser source operating at 2 μm

Latkowski¹,

Hänsel²,

Veldhoven³

et al. 2016

Optica

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We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.

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Infrared Methods for Gas Detection

Cited by 38 publications

References 41 publications

Generation of 36 μm radiation and telecom-band amplification by four-wave mixing in a silicon waveguide with normal group velocity dispersion

Generation of 36 μm radiation and telecom-band amplification by four-wave mixing in a silicon waveguide with normal group velocity dispersion

III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

Monolithically integrated widely tunable laser source operating at 2 μm

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