2017
DOI: 10.1016/j.sna.2017.06.005
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Infrared photo-resistors based on recrystallized amorphous germanium films on flexible substrates

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Cited by 6 publications
(7 citation statements)
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“…In the first step, a commercial IR sensor has been used to optimize the calibration system and then to realize a benchmark system for the prototype sensors (see Fig. 8.14a, b) [43,44].…”
Section: Short Range Sensormentioning
confidence: 99%
See 1 more Smart Citation
“…In the first step, a commercial IR sensor has been used to optimize the calibration system and then to realize a benchmark system for the prototype sensors (see Fig. 8.14a, b) [43,44].…”
Section: Short Range Sensormentioning
confidence: 99%
“…Acknowledgements This work has been funded by the Italian Ministry of Education, Universities and Research (MIUR) under the Flagship Project "Factories of the Future-Italy" (Progetto Bandiera "La Fabbrica del Futuro") [48], Sottoprogetto 1, research projects "FACTOry Technologies for HUMans Safety" (FACTOTHUMS) and "Improving human-robot cooperation and safety in shared automated workplaces of the automotive industry". The latter project was selected by the Canada-Italy Concurrent Call on Automotive Manufacturing R&D and its twin Canadian project was funded by Automotive Partnership Canada to assess the usability of the technological and architectural solutions in a pre-industrial automotive scenario [43,44].…”
mentioning
confidence: 99%
“…[7][8][9][10][11][12][13] At present, Ge has extensive and important applications in elds such as semiconductors, aerospace measurement and control, nuclear physics detection, optical ber communication, infrared optics, solar cells, chemical catalysts, and biomedicine. [14][15][16][17][18][19][20] Ge is one of the most dispersed elements and there is almost no concentrated Ge deposit in the Earth's crust. Thus, it is particularly important to nd suitable methods to enrich, prepare and purify Ge.…”
Section: Introductionmentioning
confidence: 99%
“…28 The amorphous germanium (a-Ge) thin film also has been studied for the infrared photoresistors. 29 Moreover, the heteroepitaxy of Ge on Si is a topic of research with significant technological importance. An epitaxial SiGe (epi-SiGe) layer has already been used in Sibased high-performance devices such as heterojunction-bipolar transistors and photodetectors.…”
Section: ■ Introductionmentioning
confidence: 99%
“…In addition, c-Ge has a high mobility, promoting its attractive application as the substrate in a metal oxide semiconductor field effect transistor (MOSFET). , Ge is also applied in the bottom cell of tandem solar cells as a form of a hydrogenated microcrystalline silicon germanium (μc-SiGe:H) thin film . The amorphous germanium (a-Ge) thin film also has been studied for the infrared photoresistors . Moreover, the heteroepitaxy of Ge on Si is a topic of research with significant technological importance.…”
Section: Introductionmentioning
confidence: 99%