Infrared radiometry for monitoring temperature of photoresist during dry etching

Abstract

The temperature of a thin photoresist layer on a silicon wafer was measured in situ and controlled during a dry etching process by using a silver halide optical fiber noncontact thermometer. We were able to monitor and control the photoresist temperature to within 2 °C of a present value. This may be used to prevent cross linking and deterioration of the photoresist during dry processing of semiconductors.