InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate

Takasuka, Yasuyuki; Yonei, Kenji; Yamauchi, H.; Ogura, Mutsuo

doi:10.1143/jjap.44.2546

Cited by 2 publications

(3 citation statements)

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“…While there has been significant research effort towards vertical InN quantum wires, there is less prior work on horizontal InN wire arrays that could be more easily incorporated into full epitaxial devices. It has been previously shown in several III-V semiconductor systems that vicinal or high-index substrates enable the epitaxial growth of horizontal quantum wires with 1D optical and electrical properties [34][35][36][37][38][39][40][41]. Such substrates in the III-arsenides system include high-index (311) A GaAs and miscut (100) and (110) GaAs [35][36][37].…”

Section: Introductionmentioning

confidence: 99%

“…It has been previously shown in several III-V semiconductor systems that vicinal or high-index substrates enable the epitaxial growth of horizontal quantum wires with 1D optical and electrical properties [34][35][36][37][38][39][40][41]. Such substrates in the III-arsenides system include high-index (311) A GaAs and miscut (100) and (110) GaAs [35][36][37]. For the III-nitrides, a horizontal quantum wire formation has been observed in MOCVD-grown N-polar AlGaN/GaN heterostructures on miscut sapphires [38,[40][41][42][43].…”

Section: Introductionmentioning

confidence: 99%

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N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

et al. 2023

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The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH3 flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

et al. 2023

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“…It is reported that high electron mobility transistors (HEMTs) have a responsivity of about 3 kA=W as a photodetector [1]. Furthermore, we have been exploiting the possibility of forming a quantum nanostructure on a patterned substrate as a cost-effective way of realising a highperformance device without high-resolution lithography [2,3]. In this Letter, we report that a quantum wire FET has a very high responsivity of more than 100 kA=W, which is comparable to that of a PMT at a very low bias voltage of typically half a volt.…”

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confidence: 99%