InGaAs NIR focal plane arrays for imaging and DWDM applications

Barton, J.B.; Cannata, Robert F.; Petronio, Susan M.

doi:10.1117/12.478858

Cited by 36 publications

(15 citation statements)

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“…The applications of these materials include waveguides, organic light-emitting diodes (OLEDs), arrays of prisms, charge-coupled devices (CCDs) for digital cameras, high-resolution complementary metal-oxide semiconductor (CMOS) image sensors, and antireflective coatings. − In particular, high- n polymeric materials transparent in the near-infrared (NIR) region have been developed for use in windows, integrated optics, and lenses for NIR imaging technologies. These devices have been widely utilized in a number of night vision, defense, and optical tomography monitoring devices. − Recently, inorganic materials transparent in the NIR region, such as chalcogenide glasses and germanium semiconductors, have attracted attention for their potential application in NIR imaging devices. The chalcogenide glasses possess remarkable properties for NIR imaging, i.e., high NIR transmittance and refractive index ( n > 2.0). − However, the chalcogenide materials not only require a very high temperature ( T > 300–1000 °C) for their synthesis but also are toxic and expensive.…”

Section: Introductionmentioning

confidence: 99%

Synergistic Effect of Sulfur and Chalcogen Atoms on the Enhanced Refractive Indices of Polyimides in the Visible and Near-Infrared Regions

Kim

Goh

et al. 2019

Macromolecules

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To develop thermally stable optical polymers for visible and near-infrared sensor applications, a series of sulfur-containing polyimides (PIs) with chalcogen atoms were successfully synthesized via conventional two-step polycondensation of 4,4′-[p-thiobis(phenylenesulfanyl)]diphthalic anhydride (3SDEA) with four diamines: 4,4′-oxidianiline (ODA), 4,4′-thiodianiline (TDA), 4,4′-selenodianiline (SEDA), and 4,4′-tellurodianiline (TEDA). Because of the large atomic polarizabilities of the sulfur, selenium, and tellurium atoms, the resultant PIs exhibited significantly high refractive indices in the 1.738–1.778 range at 637 nm along with a transmittance >90% at 650–1500 nm. In addition, the PIs exhibited good thermal stability, with high thermal decomposition and glass transition temperatures (T d5% > 390 °C and T g = 183–217 °C, respectively). Owing to the good affinity of SEDA–3SDEA for TiO2 nanoparticles, a nanocomposite film with a 3.0 wt % loading of TiO2 nanoparticles exhibited a refractive index of 1.774 at 637 nm.

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Section: Introductionmentioning

confidence: 99%

Synergistic Effect of Sulfur and Chalcogen Atoms on the Enhanced Refractive Indices of Polyimides in the Visible and Near-Infrared Regions

Kim

Goh

et al. 2019

Macromolecules

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“…Near infrared (NIR) imaging devices have attracted a great deal of research interest because of their potential applications in range finding, security, semiconductor wafer inspections as well as medical imaging1234. The spectral region between 1 and 1.8 µm is of particular commercial interest due to the low water absorption in this range.…”

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confidence: 99%

Multi-spectral imaging with infrared sensitive organic light emitting diode

Kim

Lai

Lee

et al. 2014

Sci Rep

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Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions.

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“…I MAGING devices for the near infrared range, especially in the so-called eye-safe region around 1.5 m have become increasingly important in many military and commercial applications, such as night vision, covert surveillance, range finding, and semiconductor wafer inspection [1]. Currently, the industry standard for a 1.5 m camera is based on an In Ga As (InGaAs) photodetector interconnected with a silicon read out integrated circuit using indium bump technology [2].…”

Section: Introductionmentioning

confidence: 99%

Pixelless imaging device using optical up-converter

Luo

Ban

Liu

et al. 2004

IEEE Electron Device Lett.

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A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 m optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 m, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.Index Terms-Charge coupled devices (CCDs), image converters, infrared detectors, infrared image sensors, infrared imaging, light-emitting diodes (LEDs), optical frequency conversion, pixelless imaging.

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InGaAs NIR focal plane arrays for imaging and DWDM applications

Cited by 36 publications

References 0 publications

Synergistic Effect of Sulfur and Chalcogen Atoms on the Enhanced Refractive Indices of Polyimides in the Visible and Near-Infrared Regions

Synergistic Effect of Sulfur and Chalcogen Atoms on the Enhanced Refractive Indices of Polyimides in the Visible and Near-Infrared Regions

Multi-spectral imaging with infrared sensitive organic light emitting diode

Pixelless imaging device using optical up-converter

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