InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Song, Hai‐Zhi; Hadi, Mukhtar; Zheng, Yan‐Zhen; Shen, Bizhou; Zhang, Lei; Ren, Zhilei; Gao, Ruoyao; Wang, Zhiming M.

doi:10.1186/s11671-017-1898-y

Cited by 29 publications

(12 citation statements)

References 38 publications

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“…It has been shown [20] that a good account of the exciton spectrum can be obtained already at the second-Born perturbation level. At this order the solution of equation (7) takes the form d⟨x, ν|C (2) …”

Section: Methodsmentioning

confidence: 99%

“…In general the self-energy function C x (E) can be represented as a sum of the contribution Σ x (E) from the off-shell quantum-fluctuation processes and the contribution C on x (E) from onshell processes leading to the system damping The interaction of the QD exciton with acoustic phonon reservoir generates pure quantum fluctuations that do not lead to decay processes, and, as a result, C (2) x (E) gives contribution only to Σ x (E). Up to now we did not account for the self-energy processes caused by the interaction of the exciton with its own radiation field.…”

Section: Methodsmentioning

confidence: 99%

“…Semiconductor quantum dots being nanometer-scale islands have unique optical properties [1] that make them attractive candidates for many optoelectronic applications such as new types of single-photon sources [2,3] and lasers [4,5], or for use as computational building blocks of a quantum computer [6][7][8]. However, quantum dots are embedded in a surrounding solid, and the carriers confined to the dot interact with their environment most notably with phonons.…”

Section: Introductionmentioning

confidence: 99%

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Quantum fluctuations in semiconductor quantum dots and their contributions to the self-energy functions of exciton states

Mutygullina

Khamadeev

Blum

et al. 2017

J. Phys.: Conf. Ser.

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Photon echo in the ensemble of semiconductor quantum dots spread on a glass substrate K R Karimullin, M V Knyazev, A I Arzhanov et al. Abstract. Influence of quantum fluctuations in a system consisting of a quantum dot and the reservoir of acoustic phonons on processes in which the quantum dot takes part is investigated. Under some conditions this influence is shown to be very strong. We find a contribution from the quantum fluctuations to the self-energy function of the exciton coupled to the quantum dot. INTRODUCTIONSemiconductor quantum dots being nanometer-scale islands have unique optical properties [1] that make them attractive candidates for many optoelectronic applications such as new types of single-photon sources [2,3] and lasers [4,5], or for use as computational building blocks of a quantum computer [6][7][8]. However, quantum dots are embedded in a surrounding solid, and the carriers confined to the dot interact with their environment most notably with phonons. Because of a strong suppression of phonon induced transitions between electronic states localized in quantum dots, the carrier-phonon interaction results in the decoherence of the optical polarization i.e. in pure dephasing being a major source for the decoherence. For S-shell excitons, the dominant sources of the pure dephasing are the longitudinal acoustic phonons [9][10][11][12][13][14][15][16][17]. Pure dephasing is caused by real irreducible processes. However, a significant contribution to the dot-reservoir interaction comes also from quantum fluctuations in which the reservoir degrees of freedom manifest themselves in a virtual state (i.e. the energies of the intermediate states are not equal to the energy of the initial and final state). Quantum fluctuations give rise to the shift of the dot energy levels known as the polaron shift. They also give a dominant contribution to self-energy functions of the quantum dots (QD) states. The energy dependence of QD selfenergy functions can have a significant effect on the emission spectra of a strongly coupled quantum-dot cavity systems [18][19][20][21]. The problem is that despite the self-energy functions are used for description of the evolution QD interacting with environment, usually they are derived from quantum-field Green functions. A consistent description of quantum dynamics is ensured only by making use of the Green operator. In atomic physics where the self-energy functions of atomic states determine the Lamb shifts and widths of spectral lines the Green-function method has turned out to be very effective. The reason for this is the weakness of the electromagnetic interaction. However, the self-interaction of QD excitons is much more significant than the interaction of an atom with its own radiation field. In this paper we investigate the effect of

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantum fluctuations in semiconductor quantum dots and their contributions to the self-energy functions of exciton states

Mutygullina

Khamadeev

Blum

et al. 2017

J. Phys.: Conf. Ser.

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“…К новым перспективным материалам относятся пятикомпонентные твердые растворы (ПТР) соединений A III B V . Интерес к ним вызван возможностью формирования структурно совершенных переходов за счет одновременного согласования параметров решетки (a) и коэффициентов термического расширения (КТР) сопрягаемых материалов [1][2][3][4].…”

Section: Introductionunclassified

Твердые растворы AlGaInSbAs, выращенные на подложках InAs методом зонной перекристаллизации градиентом температуры

Лунин¹,

Лунина²,

Алфимова³

et al. 2020

Физика И Техника Полупроводников

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Growth of AlGaInSbAs solid solutions on InAs substrates from liquid phase in a temperature gradient field is discussed. There are calculated parameters and studied luminescent properties and spectral characteristics of AlGaInSbAs solid solutions isoperiodic to InAs substrates. Within the model of regular solutions, an analysis of heterophased neutrality in Al–Ga–In–Sb–As system is carried out. Regions of hermodynamic stability to spinodal decomposition of AlGaInSbAs solid solutions and isoperiodicity intervals to InAs substrate are revealed.

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“…Многокомпонентные гетероструктуры на основе со-единений A 3 B 5 все чаще применяются в качестве эле-ментной базы оптоэлектроники [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Интерес к ним вызван возможностью повышать совершенство гетеро-границы за счет одновременного согласования пара-метров решетки и коэффициентов термического расши-рения (КТР) сопрягаемых материалов.…”

Section: Introductionunclassified

Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

Lunina¹,

Lunin²,

Kalinchuk³

et al. 2018

Физика Твердого Тела

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InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

Cited by 29 publications

References 38 publications

Quantum fluctuations in semiconductor quantum dots and their contributions to the self-energy functions of exciton states

Quantum fluctuations in semiconductor quantum dots and their contributions to the self-energy functions of exciton states

Твердые растворы AlGaInSbAs, выращенные на подложках InAs методом зонной перекристаллизации градиентом температуры

Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

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