InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

“…Indium-tin oxide (ITO) is widely utilized in light-emitting diodes (LEDs), [1][2][3] thin-film transistors (TFTs), [4][5][6] and liquid crystal displays (LCDs) [7][8][9] owing to its excellent light transmission in the visible region and good electrical conduction in current spreading. Many techniques have been developed to prepare ITO films, such as thermal evaporation, electron beam evaporation, chemical vapor deposition (CVD), and DC magnetron sputtering.…”

The electrical conductivity of cubic (In1−x Ga x )2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer

“…36,37) IGTO has been further proposed as an alternative transparent conducting electrode for light-emitting diodes (LEDs), with the intention to increase their external quantum efficiency in the near-ultraviolet spectral range, due to its increased absorption edge, compared to ITO. 38) Recently, we have studied well-defined, high-quality, single-crystalline (In 1−x Ga x ) 2 O 3 layers at the low-x end grown by plasma-assisted molecular beam epitaxy (PA-MBE) in terms of surface and film morphology, crystalline quality, and homogeneity 40) as well as increasing band gap and optical absorption edge with x. 41) In this work, we investigate the effect of Ga on the unintentional conductivity of the bulk and the SEAL and demonstrate intentional Sn-doping.…”

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

“…36,37 IGTO has been further proposed as an alternative transparent conducting electrode for light-emitting diodes (LEDs), with the intention to increase their external quantum efficiency in the near-ultraviolet spectral range, due to its increased absorption edge, compared to ITO. 38 Recently, we have studied well-defined, high-quality, single-crystalline (In 1-x Ga x ) 2 O 3 layers at the low-x end grown by plasma-assisted molecular beam epitaxy (PA-MBE) in terms of surface and film morphology, crystalline quality, and homogeneity 40 as well as increasing band gap and optical absorption edge with x. 41 In this work we investigate the effect of Ga on the unintentional conductivity of the bulk and the SEAL and demonstrate intentional Sn-doping.…”