InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

Abstract

High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are 81 and 68% when the temperature increases to 400 and 500 K, respectively, with respect to the value of 1128.2 mA/mm at 300 K. In addition, the breakdown voltage reaches 187 V at 300 K, which is comparable to that of a GaN-channel HEMT. The presented results demonstrate the large potentials of the InGaN-channel HEMT in high-frequency power applications.

Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode

“…(Some figures may appear in colour only in the online journal) GaN-based devices have been demonstrated to be promising candidates for future high-power applications, not only because of their breakdown field of 3.4 MV cm −1 but also their high density of two-dimensional electron gas (2DEG) induced by spontaneous polarization and piezoelectric polarization [1][2][3][4]. In particular, the process compatibility between lateral GaN Schottky barrier diodes (SBDs) and GaN highelectron-mobility transistors shows great promise for monolithic integration with suppressed parasitic capacitance, parasitic inductance and chip volume [5][6][7].…”

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

“…aN-based devices have been demonstrated to be promising candidates for high-power applications having high density and high mobility of 2D electron gas (2DEG) formed by a polarization effect, as well as a high critical field of 3.4 MV cm −1 . [1][2][3][4] In particular, with the maturation of GaN heteroepitaxial on silicon, GaN devices show great potential to be widely commercialized due to their competitive performance and low cost. 5) In addition, lateral Schottky barrier diodes (SBDs) fabricated on GaN heterojunction structure possess a compatible fabrication process with GaN high-electron-mobility transistors, showing great promise for monolithic integration with suppressed parasitic inductance, capacitance and chip volume.…”

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

“…There are some applications of novel material and special structure are proposed to pursue a higher GVS. Gao et al [123] employed the nonlinear ferroelectric material of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) as the gate dielectric to enhance the linearity of the GaN HEMT. With the increasing gate voltage, the PZT goes into the nonlinear region and changes the concentration of 2DEG due to its nonlinear polarization effect.…”

“…25. (Color online) Transfer characteristics of the AlGaN/GaN MIS-HEMTs with 20 nm SiN and 60 nm PZT at V DS = 10 V[123] .…”