InGaN/GaN Laser Diodes With High Order Notched Gratings

et al. 2018

Appl. Phys. Express

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We report on the continuous wave, room temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices, based on the (Al,In)GaN material system, is described. The uncoated devices were mounted into TO packages for characterization and exhibited single wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution limited full-width at half maximum of 6.5 pm.

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confidence: 99%

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confidence: 99%

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

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Stanczyk

et al. 2018

Appl. Phys. Express

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“…In this section we present recent results obtained from 39 th order devices in the 42X nm range [13]. Previous results from 3 rd order grating chips can be found in [9].…”

Section: Characterisationmentioning

confidence: 91%

Distributed feedback InGaN/GaN laser diodes

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Gallium Nitride Materials and Devices XIII

Yadav

et al. 2018

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We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

“…Both the 3 rd order and 39 th order grating structures have been tested and show good single wavelength operation. More details can be found in [7], [8].…”

Section: Fabrication and Measurement Of Blue Dfb Lasermentioning

confidence: 99%

InGaN/GaN Laser Diodes and their Applications

2018 20th International Conference on Transparent Optical Networks (ICTON)

Gwyn

Viola

et al. 2018

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Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.