InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition

Pinnington, T.; Koleske, Daniel; Zahler, James M.; Ladous, Corinne; Park, Y.-B.; Crawford, Mary H.; Banas, Michael A.; Thaler, G. T.; Russell, Michael J.; Olson, Steve; Atwater, Harry A.

doi:10.1016/j.jcrysgro.2008.01.022

Cited by 11 publications

(1 citation statement)

References 17 publications

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“…The elevated temperature due to recombination process has aging effect and reduces the device reliability for long life-time application. In addition, the higher temperature and material intrinsic defects induces micro-cracks which is physical damage [20][21]. The defects or micro-cracks is originating from lattice mismatch at nitride/substrate interface.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material

Saranya

Sivamangai

2021

Opt Quant Electron

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A novel high-k dielectric material is proposed for InGaN/GaN-LED to improve the performance. The proposed LED is analyzed and benchmarked with conventional LED using Technological Computer Aided Design (TCAD). The qualitative consistency of the optical characteristics of LED in this work has been observed that validate the TCAD simulation. Further, it is observed that proposed LED recorded higher luminous power and internal quantum efficiency (IQE) than that of conventional LED. At the injection current of 600 mA, the proposed and conventional LED yielded luminous power of 1600 mW and 1400 mW, respectively. Further, IQE of the proposed LED is higher than that of conventional LED by 12%. The improvement in the optical performance is attribute to high-k dielectric material induced additional electric field and radiative recombination rate. Thus, the proposed LED with high-k dielectric material is an outstanding device in lightning application.

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Section: Introductionmentioning

confidence: 99%