InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate

Yu, Hung Wei; Chung, Ching-Che; Wang, Chin Te; Nguyễn, Hồng Quân; Tran, Binh Tinh; Lin, Kung Liang; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi

doi:10.7567/jjap.51.080208

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…These materials are selected such that the energy gap of the top cell is higher than that of the bottom cell. Therefore, the top cell absorbs the short wavelengths and the bottom cell absorbs the long wavelengths of the input solar radiation spectrum [23,32]. The material of the two BSF layers is selected to passivate the surface recombination among the base of the top cell and the emitter of the GaAs tunnel diode.…”

Section: Design Of the Ingap/gaas Dj Solar Cellmentioning

confidence: 99%

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Salem

Saif

Shaker

et al. 2021

International Journal of Photoenergy

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In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: J SC = 18.23 mA / c m 2 , V OC = 2.33 V , FF = 86.42 % , and the conversion efficiency ( η c ) equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are J SC = 19.84 mA / c m 2 , V OC = 2.32 V , FF = 83.9 % , and η c = 38.53 % . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.

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Section: Design Of the Ingap/gaas Dj Solar Cellmentioning

confidence: 99%

Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD

Salem

Saif

Shaker

et al. 2021

International Journal of Photoenergy

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“…GaN and AlN, and its alloys (AlGaN) heterostructures is a very interesting materials because of their applications in high-power, high-frequency field effect transistors, light-emitting diodes, and high electron mobility transistors (HEMTs) [1][2][3][4][5][6][7][8] than other materials, such as GaAs or GaP [9][10][11]. To improve the performances of these devices, the electronic properties of the twodimensional electron gas (2DEG) formed in the AlGaN/GaN quantum well is the most important factor.…”

Section: Introductionmentioning

confidence: 99%

AlGaN Based High Electron Mobility Transistors

Yu¹,

Xiejia²

2019

Preprint

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High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the twodimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

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“…The surface of the samples was analyzed with an AFM system in contact mode and Photoluminescence (PL) experiments were carried out at 1.4 K using conventional lock-in techniques. Figure 2 shows the AFM images of the 2 samples along the [1][2][3][4][5][6][7][8][9][10] direction can be observed and their size and concentration decrease when the amount of Ga in each cycle is lowered. This is mainly due to the fact that, under this special growth condition, the first Ga layer covers the whole surface while the excess of Ga material forms droplet spread all over the surface that act as reservoirs of Ga material in order to form the GaAs:Si layers during the annealing under As flux [12,13].…”

mentioning

confidence: 99%