InGaP lattice-mismatched LPE growth on GaAs substrates by epitaxial lateral overgrowth technique

Lattice-mismatched InGaP/GaAs (111)B liquid phase epitaxy with epitaxial lateral overgrowth

“…The stripe seed windows were opened using a conventional photolithographic technique and chemically etched with buffered HF for 55 s. The seed windows had width 7 mm and stripe period 100 mm; they were oriented in the [2 11] direction. A series of crystal growth steps were performed by sliding-boat liquid phase epitaxy (LPE) [3]. We first grew an InGaP ELO layer over the entire GaAs (111)B substrate.…”

“…In this case, temperature performance was improved by using material combination that has a wide band gap difference. As the first step in realizing 1.3-mm-wavelength InGaAs/InGaP lasers, we prepared an In 0.8 Ga 0.2 P (l=820 nm) ternary virtual substrate on a GaAs (111)B substrate [3]. The lattice mismatch between the InGaP layer and the GaAs substrate, however, is about 2.3%.…”

Liquid-Phase Epitaxy

“…ELO can also provide defect filter [389] in that areas of the epitaxial layer grown over the mask exhibit dramatic reductions in defect densities compared to epitaxial layers grown on unmasked substrates [578] [383]; LPE ELO has been especially advantageous in heteroepitaxial and hybrid epitaxy methods whereby LPE lateral overgrowth is initiated on exposed seeding areas of partially maksed III-V buffer layers formed on silicon by MBE or CVD; see, for example [314,383,[390][391][392][393][394][395], and [388]. [311] further optimized liquid-phase microchannel epitaxy of InP on silicon using In-Sn melts and an InP source on top of the melt.…”

Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate

“…Recently, special attention has been paid to the selective epitaxial growth of III-V compound semiconductors to restrict defect propagation into the grown epitaxial layer. A number of recent articles have reported the selective growth of binary and ternary III-V semiconductors by LPE [6][7][8][9][10][11][12][13][14][15][16] and CCLPE [17][18][19][20]. Selective growth by LPE with changing mask layers and mask openings was also investigated [21][22].…”