Lattice-mismatched InGaP/GaAs (111)B liquid phase epitaxy with epitaxial lateral overgrowth

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

“…These applications consist of microwave field effect transistors, radio-frequency detectors, phototransistors, heterojunction bipolar transistors, quantum confinement devices and space solar cell. There are currently a vast number of reports of experimental studies of characteristic parameters such as the barrier height and ideality factor in a great variety of MS contacts [7][8][9][10]. The main characteristic parameters of MS contacts can vary as a function of the various factors.…”

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

“…The current-voltage (I-V) character- istics of the Schottky barrier diodes usually deviate from the ideal thermionic emission (TE) current model. There are currently a vast number of reports of experimental studies of characteristic parameters such as the barrier height and ideality factor in a great variety of MS contacts [11][12][13][14].…”

Liquid-Phase Epitaxy

“…[311] further optimized liquid-phase microchannel epitaxy of InP on silicon using In-Sn melts and an InP source on top of the melt. Hayashi et al [396] made virtual substrates of lattice-mismatched In 0.8 Ga 0.2 P on oxide-masked (111) GaAs using epitaxial lateral overgrowth LPE. Hayashi et al [396] made virtual substrates of lattice-mismatched In 0.8 Ga 0.2 P on oxide-masked (111) GaAs using epitaxial lateral overgrowth LPE.…”