Inherent properties of binary tetrahedral semiconductors

Abstract

A new approach utilising the concept of ionic charge theory has been used to explain the inherent properties such as lattice thermal conductivity and bulk modulus of 3,5 and 2,6 semiconductors. The lattice thermal conductivity of these semiconductors exhibit a linear relationship when plotted on a log scale against the nearest neighbour distance but fall on two straight lines according to the product of the ionic charge of the compounds. On the basis of this result a simple relationship of lattice thermal conductivity with bulk modulus is proposed and used to estimate the bulk modulus of these semiconductors. A fairly good agreement has been found between the experimantal and calculated values of these parameters for zinc blende structured solids.Comment: 6 pages, 19 reference

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

“…Knowledge of different thermodynamic properties such as Debye temperature helps engineers in the improvement of the manufacturing of the semiconductor devices by good selecting of the appropriate materials [2]. And due to technological importance of II-VI and III-V semiconductors, several experimental and theoretical works [4][5][6][7][8][9] on their electronic, optical, mechanical and thermal properties were published. The present work aims to establish simple empirical expressions between the Debye temperature and the bond length, and between the melting point and the bond length for II-VI and III-V semiconductors.…”

Optical properties and electronic polarizability of boron-antimonide semiconductor

“…In cubic zinc-blende structure, the X-ray crystal density g is given as follow [5], [23][24][25]: g = 4M /NAV, where M is the molecular weight (for BSb compound, M = 132.571uma), NA is the Avogadro number (NA = 6.022×10 23 mol −1 ), and V is the volume. Using the experimental lattice constant a = 5.30 Å measured by Das et al [10] of thin films cubic zincblende BSb semiconductor, the crystal density of BSb compound is found to be 5.915 g/cm 3 , which is relatively smaller than the value 6.37 g/cm 3 obtained from the local density approximation (LDA) [5].…”

“…(8), the value of the electronic polarizability αp is found to be 6.40Å 3 . This value is relatively higher than the value 5.40Å 3 obtained by Verma et al [26].…”

“…Replacing our obtained value of the refractive index n = 2.97, the molecular weight M = 132.571 uma for BSb compound and the Xray crystal density g = 5.915 g/cm 3 in the empirical formula of Eq. (8), the value of the electronic polarizability αp is found to be 6.40Å 3 .…”

“…They found that the high-frequency refractive index, the optical susceptibility, electronic polarizability and crystal ionicity of both cubic zinc blende, and wurtzite type structure compounds exhibit a linear relationship when they are plotted to a log-log scale as against the plasmon energy. Using a new approach based on the concept of ionic charge theory, the lattice thermal conductivity and the bulk modulus of III-V and II-VI semiconductor materials were studied by Verma et al [3]. They found that the lattice thermal conductivity of these semiconductors exhibits also a linear relationship when it is plotted on a log-log scale against the nearest-neighbor distance.…”