Inhomogeneous barrier height effect on the current-voltage characteristics of a W/4H-Sic Schottky diode

Zeghdar, Kamal; Dehimi, L.

doi:10.1109/icee-b.2017.8192222

Cited by 3 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, the promising properties of p-type 4H-SiC have not yet been accomplished to their full potential for use in the fabrication of highly efficient power devices depending on the quality of the SiC layers and metal-SiC contacts. The contact formation process for soldering and attaching dies, (e.g., micro or nanoparticle pastes or solders) and their thermal stability as Schottky contacts have been studied to realize their operational requirements and to improve the performance of SiC-based devices [8][9][10][11]. Direct bonding (DB) technology has significant attention in the development of power electronics and micro electromechanical systems [12].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

et al. 2020

View full text Add to dashboard Cite

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

et al. 2020

View full text Add to dashboard Cite

show abstract

Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes

Wang

Chen

Bao

et al. 2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Ziko

Koel

Rang

et al. 2020

MSF

View full text Add to dashboard Cite

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

show abstract

Inhomogeneous barrier height effect on the current-voltage characteristics of a W/4H-Sic Schottky diode

Cited by 3 publications

References 17 publications

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Performance Evaluation of W-C Alloy Schottky Contact for 4H-SiC Diodes

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

Contact Info

Product

Resources

About