Initial Crystal Growth Stage of BRBO Thin Film

Makita, Takehiko; Ogihara, Mitsuhiko; Toda, Fumihiko; Abe, Hitoshi

doi:10.1007/978-4-431-68305-6_207

Cited by 3 publications

(7 citation statements)

References 2 publications

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“…By means of a thickness-dependent study, these authors demonstrated that the BaO layer is localized at the Si/BBO interface. The result of a single-oriented film with a naturally formed buffer layer is in agreement with the studies performed by Makita et al [143,144] and Norton et al [146].…”

Section: Hunting the Insulator-to-metal Transitionsupporting

confidence: 91%

“…Norton et al [145] also used MBE to deposit thin BBO films, but single crystal MgO substrates were used instead. Contrary to Makita et al [143], a BaBi 2 O y composition was observed -with too much bismuth and too little oxygen present. A disordered BaO layer is initially formed before the epitaxial growth of BaBi 2 O y [146].…”

Section: Thin Films and Their Crystal Structurecontrasting

confidence: 89%

“…In the multi-oriented films of Makita et al [143,144], the diffraction peak around 28 is linked to BBO (110), see Fig. 2.3(c).…”

Section: Hunting the Insulator-to-metal Transitionmentioning

confidence: 94%

“…In 1993, Makita et al [143] used molecular beam epitaxy (MBE) to fabricate BBO thin films. They used STO substrates with two orientations, (001) and (011).…”

Section: Thin Films and Their Crystal Structurementioning

confidence: 99%

“…In the work published by Ferreyra et al [119], the BBO(200) diffraction (with permission from [118]); and (c) STO(110) (with permission from [143]).…”

Section: Hunting the Insulator-to-metal Transitionmentioning

confidence: 99%

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Oxide materials as building blocks for artificial topological insulators

Bouwmeester

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An oxide topological insulator could be a possible building block for a new generation of consumer electronics, contributing to the need for more energy-efficient devices. A topological insulator is famous for its insulating bulk characteristics and metallic surface states. Various experimental realizations are known, but all with a relatively small energy band gap. Using oxide materials for artificially designed topological insulators potentially enlarges the size of the band gap or could enrich the functionality. Application at room temperature could become feasible and would open a route towards dissipationless electronics. In this dissertation, various design principles are explored as possible routes to achieve a nontrivial phase in oxide materials.

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Section: Hunting the Insulator-to-metal Transitionsupporting

confidence: 91%

Section: Thin Films and Their Crystal Structurecontrasting

confidence: 89%

“…In the multi-oriented films of Makita et al [143,144], the diffraction peak around 28 is linked to BBO (110), see Fig. 2.3(c).…”

Section: Hunting the Insulator-to-metal Transitionmentioning

confidence: 94%

“…In 1993, Makita et al [143] used molecular beam epitaxy (MBE) to fabricate BBO thin films. They used STO substrates with two orientations, (001) and (011).…”

Section: Thin Films and Their Crystal Structurementioning

confidence: 99%

“…In the work published by Ferreyra et al [119], the BBO(200) diffraction (with permission from [118]); and (c) STO(110) (with permission from [143]).…”

Section: Hunting the Insulator-to-metal Transitionmentioning

confidence: 99%

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Oxide materials as building blocks for artificial topological insulators

Bouwmeester

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Growth and photo-response of (110) oriented BaBiO3films on SrTiO3(001) substrates

et al. 2022

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Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate

Ahmed

Gendt

Merckling

2022

Journal of Applied Physics

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The BaBiO3 perovskite oxide is an interesting material system because of its superconductivity when p-doped and the predicted topological insulating nature when n-doped. Single crystalline BaBiO3 films are grown by molecular beam epitaxy with high quality utilizing the adsorption-controlled regime, where volatile Bi is supplied in excess in the presence of oxygen radicals. BaBiO3 films are integrated on Si(001) substrates through growth on a SrTiO3(001) buffer layer. Despite the 11.77% lattice mismatch, by systematically varying growth parameters, such as plasma conditions, substrate temperature, and metallic fluxes, a growth window for the BaBiO3 is well-established. Within the optimum growth window, films are stoichiometric and of high crystalline quality based on the different physical characterization techniques. The development of robust layers is facilitated by accessing the self-regulating regime, where only the stoichiometric quantity of Bi sticks during the epitaxy.

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Initial Crystal Growth Stage of BRBO Thin Film

Cited by 3 publications

References 2 publications

Oxide materials as building blocks for artificial topological insulators

Oxide materials as building blocks for artificial topological insulators

Growth and photo-response of (110) oriented BaBiO3films on SrTiO3(001) substrates

Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate

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