We have demonstrated the highest RF output power density of 12.88 W/mm, to our knowledge, at 2.14 GHz in GaN high electron mobility transistor on silicon (Si) substrate at high voltage operation. This highest record was achieved by reducing the parasitic loss at the conductive interface layer between the epitaxial structure and the Si substrate, and thinning the Si substrate thickness. The parasitic loss evaluation by a capacitance–voltage method proved to be effective since the epitaxial wafer selection is possible without fabricating RF devices. Si substrate as thin as 60 µm results in good thermal resistance and contributes to the large RF output power density.

No abstract

The XPS (X-ray photoelectron spectroscopy) measurements of the 80 K-phase Bi-Sr-Ca-Cu-O single crystals were carried out on surfaces obtained by cleaving in vacuum, by cleaving in air and heating in vacuum, and by Ar+-sputter etching of the air-cleaved-and-heated surface. The chemical bond natures of all the constituent elements from the air-cleaved-and-heated surface are approximately equal to those from the vacuum-cleaved surface. Sr and Ca from the sputtered surface are more oxidized than those from the vacuum-cleaved surface.

No abstract

In this paper we report, for the first time, the large current gain of the metal base transistor using Bi(Ba, Rb)O, and oxide semiconductors. I-V curves of a Bi(Ba, Rb)O, base transistor in common-base configuration were studied from room temperature to 30 K. Current gain (Y -1 was obtained at 50 K. Transport behavior was discussed by analysis of threshold voltages and derivatives dIc / dV,,.