Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Vermaut, P.; Ruterana, P.; Nouet, G.; Salvador, A.; Morkoç̌, H.

doi:10.1557/s1092578300002143

Cited by 7 publications

(7 citation statements)

References 12 publications

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“…9,13,14 In some samples, ͕101 0͖ domains, which contain amorphous material and may exhibit a dislocation character, were observed. 15,16 In previous work, it was noticed that the density of defects could be related to the surface treatment before growth. 17 The ͕12 10͖ planar defects were found to easily fold from the prismatic into the basal plane, with the possibility to be terminated by a partial dislocation.…”

mentioning

confidence: 99%

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

Vermaut¹,

Nouet²,

Ruterana³

1999

Applied Physics Letters

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High resolution electron microscopy has been used to determine the atomic structure of the {12̄10} stacking fault which easily folds from prismatic to basal plane in wurtzite (Al, Ga)N epitaxial layers. This letter reports experimental evidence for a simultaneous occurrence of two atomic configurations for the {12̄10} stacking fault. In more than 90% of the cases, it takes the atomic structure of the 1/2〈101̄1〉{12̄10} stacking fault; and in very few nanometric areas, it exhibits a 1/6〈202̄3〉 stacking fault atomic configuration.

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mentioning

confidence: 99%

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

Vermaut¹,

Nouet²,

Ruterana³

1999

Applied Physics Letters

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“…Their line is roughly parallel to the c growth axis and the large majority are edge type. It has been shown F99W5.4 that c and a+c dislocations tend to bend and annihilate ; the density of such dislocations that reach the layer surface is only a few percent of that near the interface [9,16]. In MBE grown GaN layers, our HREM observations exhibit a typical contrast (Fig.…”

Section: The Threading Dislocationsmentioning

confidence: 69%

“…2, as larger as 2a edge component may be exhibited by such defects. It was noticed that the former class of nanopipes are confined inside the first 200 nm of the epitaxial layer [16]; they contain amorphous material in layers grown on 6H-SiC, whereas they are empty on top of sapphire [17]. [7,8,9].…”

Section: The Nanopipesmentioning

confidence: 99%

The Atomic Structure of Extended Defects in GaN

Ruterana¹,

Nouet²

1999

MRS Proc.

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“…When examined in HREM, these domains contain amorphous material (Figure 4). In planar view, they are clearly limited by {10 0} facets and some of them exhibit an a dislocation character [8]. They constitute another factor that seems to be a consequence of the three-dimensional growth mode of the GaN layers on SiC.…”

Section: Chemical Cleaning + H 2 Plasmamentioning

confidence: 98%

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE

Ruterana¹,

Vermaut²,

Nouet³

et al. 1997

MRS Internet j. nitride semicond. res.

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Heteroepitaxy of hexagonal symmetry materials is more complicated than in the more usual case of cubic systems. In the growth of layers on the (0001) surfaces, the misfit dislocations always exhibit a screw component that leads to rotation of the epilayer in a 3 dimensional growth mode. The size of the islands will depend on many factors among which the substrate surface treatment, prior to growth, may be a predominant one. In this work, a comparative study is carried out for samples grown on plasma treated samples, with and without additional substrate annealing prior to epitaxy. It is found that the defect density can be brought below 10 9 cm -2 , which is better than one order of magnitude in comparison to the layers grown on sapphire substrates. On top of the annealed substrates, the island growth is not obvious. Whereas, misorientations as large as a few degrees can be measured inside the layers on top of non annealed substrates, justifying the occurrence of high densities of threading dislocations.

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Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Cited by 7 publications

References 12 publications

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

The Atomic Structure of Extended Defects in GaN

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE

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Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Cited by 7 publications

References 12 publications

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

The Atomic Structure of Extended Defects in GaN

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE

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Product

Resources

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Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE