Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Y.; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

doi:10.1063/1.4994627

Cited by 60 publications

(48 citation statements)

References 19 publications

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“…[2] Its control is crucial for layers with low doping levels and nonuniform incorporation of carbon can reduce the breakdown voltage of electronic devices dramatically. [3][4][5][6] Carbon is suspicious to be related to current collapse and dispersion in transistors when used intentionally in highly resistive buffer layers. [7,8] Thus, the electronic properties of carbon in GaN remain of high interest.…”

Section: Introductionmentioning

confidence: 99%

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 10 10 cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, C N -a-C Ga -a-C N and C N -a-C Ga -c-C N , are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 .

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Section: Introductionmentioning

confidence: 99%

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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“…Schottky contact made on surface modified GaN showed much better reverse leakage characteristics than unmodified GaN [15]. Sang et al performed detailed analysis on leakage path by photon emission microscopy (PEM), and found the leakage current occurred at polygonal pits, where carbon impurity accumulated and acted as trap in carrier tunneling [16]. The result aligned with the Cao et al's finding that low carbon concentration was necessary to achieve high Schottky contact quality, by an experiment correlating contact performance with carbon doping level [17].…”

Section: Metal Schottky Contacts To Ganmentioning

confidence: 99%

“…Simulation was performed by Baik et al to find the optimized FP structure [45]. A minimum metal overlay extent of 5 μm and a minimum dielectric layer thickness of 0.3 μm for SiNx was needed to avoid dielectric breakdown at the FP on GaN cap layer with an unintentional n doping level of 5 Â 10 16 lead to an optimum dielectric layer thickness; Optimum dielectric layer thickness is related with dielectric permittivity [47]. In summary, both simulation and experiment results demonstrated that addition device structures such as dielectric passivation layer, FRM and FP, can contribute to better GaN SBD performance.…”

Section: Sbd Device Fabrication and Device Structure Optimizationmentioning

confidence: 99%

GaN-Based Schottky Diode

Wang¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Schottky diode, also known as Schottky barrier diode (SBD), fabricated on GaN and related III-Nitride materials has been researched intensively and extensively for the past two decades. This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability. The chapter also discusses about the GaN lateral, quasi-vertical and vertical SBDs, and AlGaN/GaN field effect SBDs: the evolution of the epitaxial structure, processing techniques and device structure. The chapter closes with challenges ahead and gives an outlook on the future development of the GaN SBDs.

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“…TDs are classified into three types: threading edge dislocations (TEDs), threading screw dislocations (TSDs), and threading mixed dislocations (TMDs), which, propagating in the c ‐axis direction, have Burgers vectors of b =

a / 3 false⟨ 11 \overset{false¯}{2} 0 false⟩

c [0001]

, and

c [0001] + a / 3 false⟨ 11 \overset{false¯}{2} 0 false⟩

, respectively. Because different types of TDs induce different device behaviors and characteristics, identification and analysis of TDs in GaN crystals is an important research undertaking.…”

Section: Introductionmentioning

confidence: 99%

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Inotsume

Kokubo

Yamada

et al. 2020

Physica Status Solidi (b)

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Threading dislocations (TDs) in the GaN substrate and homoepitaxial layer are nondestructively evaluated using X‐ray topography (XRT), Raman spectroscopy, and multiphoton photoluminescence (MPPL) imaging. When the XRT and Raman mapping images are compared, TDs in the GaN substrate are identified as threading edge dislocations (TEDs), threading mixed dislocations (TMDs), and threading screw dislocations (TSDs). TDs are observed to propagate from the GaN substrate to the epitaxial layer. From MPPL imaging, the TEDs are found to be inclined in the [1true1¯00] direction, which is at 90° from the Burgers vector. The TMD studied in detail is found to be inclined in the [true1¯2true1¯0] direction, which is parallel to the Burgers vector. The feasibility of identifying TDs via analysis of the inclined direction of the dislocations in the GaN epitaxial layer is suggested.

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Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Cited by 60 publications

References 19 publications

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

GaN-Based Schottky Diode

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

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