Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

Martínez‐Domingo, Carme; Saura, X.; Conde, A.; Jiménez, David; Miranda, E.; Rafı́, J.M.; Campabadal, F.; Suñé, J.

doi:10.1016/j.mee.2011.03.132

Cited by 18 publications

(8 citation statements)

References 5 publications

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“…However, such estimation offers in all the cases (different frequencies and temperatures) extremely low values of ε r compared with the one expected (ε r = 0.005 calculated from experimental data against ε r = 20 which was expected [18]). Even though a certain dispersion could be a reasonable (i.e., related with the particular deposition method), the estimated difference exceeds in orders of magnitude of the spread so far reported.…”

Section: Electrical Characterizationmentioning

confidence: 65%

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

Quinteros

Hardtdegen

Barella

et al. 2018

New Uses of Micro and Nanomaterials

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Atomic layer deposition (ALD) is a standard technique employed to grow thin-film oxides for a variety of applications. We describe the technique and demonstrate its use for obtaining memristive devices. The metal/insulator/metal stack is fabricated by means of ALD-grown HfO 2 , deposited on top of a highly doped Si substrate with an SiO 2 film and a Ti electrode. Enhanced device capabilities (forming free, self-limiting current, non-crossing hysteretic current-voltage features) are presented and discussed. Careful analysis of the stack structure by means of X-ray reflectometry, atomic force microscopy, and secondary ion mass spectroscopy revealed a modification of the device stack from the intended sequence, HfO 2 /Ti/SiO 2 /Si. Analytical studies unravel an oxidation of the Ti layer which is addressed for the use of the ozone precursor in the HfO 2 ALD process. A new deposition process and the model deduced from impedance measurements support our hypothesis: the role played by ozone on the previously deposited Ti layer is found to determine the overall features of the device. Besides, these ALD-tailored multifunctional devices exhibit rectification capability and long enough retention time to deserve their use as memory cells in a crossbar architecture and multibit approach, envisaging other potential applications.

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Section: Electrical Characterizationmentioning

confidence: 65%

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

Quinteros

Hardtdegen

Barella

et al. 2018

New Uses of Micro and Nanomaterials

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“…[1][2][3] When an electric field is applied to the oxide dielectrics, leakage current will occur. This contribution deals with an overview of leakage current conduction mechanisms observed in Al 2 O 3 thin film layers of different thicknesses, processed by thermal atomic layer deposition (ALD) at a temperature of 80 C.…”

Section: Introductionmentioning

confidence: 99%

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Spahr

Montzka

Reinker

et al. 2013

Journal of Applied Physics

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Current conduction mechanisms in atomic-layer-deposited HfO 2 / nitrided SiO 2 stacked gate on 4H silicon carbide Thin Al 2 O 3 layers of 2-135 nm thickness deposited by thermal atomic layer deposition at 80 C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current. V C 2013 AIP Publishing LLC. [http://dx.

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“…Composites and multilayers of chemically distinct metal oxides are of continuous interest as materials tailoring useful electronic, mechanical and structural properties of their constituents which increase their suitability to many applications. Herewith hafnium-aluminumoxide thin films have been studied as insulating dielectrics potentially suited to application as gate dielectric materials in MOSFET structures with Si, [1][2][3][4][5] Si 0.7 Ge 0.3 , 6 In x Ga 1-x As, 7,8 or InP, 9,10 as well as memory capacitor dielectrics in three-dimensional DRAM structures. 11 For flash memory cell structures, different charge trapping materials HfO 2 , Hf-Al-O and Al 2 O 3 have been compared in metal-oxidesemiconductor capacitors with fixed Al 2 O 3 tunneling and blocking layers and Pd-electrode.…”

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confidence: 99%

Atomic Layer Deposition and Properties of HfO₂-Al₂O₃ Nanolaminates

Kukli

Kemell

Castán

et al. 2018

ECS J. Solid State Sci. Technol.

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Nanocrystalline HfO 2 :Al 2 O 3 mixture films and nanolaminates were grown by atomic layer deposition at 350 • C from metal chloride precursors and water. Formation of metastable HfO 2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states.

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Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

Cited by 18 publications

References 5 publications

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Atomic Layer Deposition and Properties of HfO₂-Al₂O₃ Nanolaminates

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Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

Cited by 18 publications

References 5 publications

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates

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Atomic Layer Deposition and Properties of HfO₂-Al₂O₃ Nanolaminates