Features of phonon-limited electron mobility behavior of double-gate field-effect transistor with (111) Si surface channel Appl.A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Volatile threshold switching and non-volatile memory switching modes of resistive switching are reported in Al/HfO2/Si(p) metal–oxide–semiconductor structures with different values of current compliance limit during electroforming. When the current is limited to below 100 µA, a reproducible threshold switching loop is reported under injection from the p-type silicon substrate. The conduction in the low resistance state is linear above a voltage threshold called holding voltage and the conductance is a non-integer multiple of the quantum of conductance. Depending on the size of the conducting filament created during the electroforming process, one or several quasi-one dimensional quantum subbands are found to contribute to the current. Abrupt transitions between different discrete conductance values are reported during increasing and decreasing voltage sweeps. These results provide strong experimental evidence suggesting that the conduction filament behaves as a quantum wire (QW). No structural instability of the filament has to be invoked to explain either the highly structured conduction properties or the set and reset switching transitions. It is claimed that the whole phenomenology can be understood by electron injection from the valence band into a narrow conducting path which behaves as a QW.

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The breakdown spot spatial distribution in Pt/HfO2/Pt capacitors is investigated using nearest neighbor statistics in combination with more conventional estimation methods such as the point-event and event-event distance distributions. The spots appear as a random point pattern over the top metal electrode and arise as a consequence of significant localized thermal effects caused by the application of high-voltage ramped stress to the devices. The reported study mainly involves the statistical characterization of the distances between each failure site and the nearest, second nearest, … kth nearest event and the comparison with the corresponding theoretical distributions for a complete spatial randomness (CSR) process. A method for detecting and correcting deviations from CSR based on a precise estimation of the average point intensity and the effective damaged device area is proposed.

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