Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress

Saura, X.; Moix, D.; Suñé, J.; Hurley, Paul K.; Miranda, E.

doi:10.1016/j.microrel.2013.07.063

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…Finally, concerning the formation process of the concave, a newly generated concave lies adjacent to the previous one, which is different from the experimental results of metal-insulator-metal capacitors with separated concaves. 19) According to our model, a concave is formed first at the first dielectric breakdown as shown in Fig. 11.…”

Section: Multiple Breakdown Model Of Carpet-like-bombing Concavesmentioning

confidence: 92%

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Sato

Hiroi

Yamabe

et al. 2014

Jpn. J. Appl. Phys.

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We observed characteristic "carpet-bombing-like concaves" after time-to-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) measurement for silicon carbide metal-oxide-semiconductor capacitors with a thermally grown oxide. A multiple breakdown model is proposed to explain the formation mechanism of the carpet-bombing-like concaves in TZDB measurement. Results and analysis of our TDDB measurements consistently support our multiple breakdown model.

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Section: Multiple Breakdown Model Of Carpet-like-bombing Concavesmentioning

confidence: 92%

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Sato

Hiroi

Yamabe

et al. 2014

Jpn. J. Appl. Phys.

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“…On the other hand, in this work, the attention is particularly focused on the spatial correlation of multiple failure events occurring in the same device. The temporal correlation of the BD events was investigated in [5] and it was shown to be consistent with a homogeneous Poisson process.…”

Section: Introductionmentioning

confidence: 99%

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

et al. 2015

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Metal-insulator-metal (MIM) large area (>10-4 cm2) capacitors with different aspect ratios were subjected to severe stress conditions (Eox>4-5 MV/cm) with the aim of generating a large density of breakdown spots (from 105 to 106 spots/cm2) in the same device. The resulting mark pattern on the top metal electrode associated with the failure events was analyzed first using conventional functional estimators for two-dimensional spatial statistics. Second, as a double check, the attention was focused on the same breakdown spot patterns but in relation to the probe point location. In this latter case, the objective was to rule out any stochastic dependence of the breakdown spot distribution on the position of the source of degradation and therefore to confirm whether or not the spots follow a complete spatial randomness (CSR) process. In order to simplify the mathematical treatment of the point-to-event distributions, the voltage probe was assumed to be located at one corner of the observation window which significantly reduces the number of cases to analyze. Infrared images revealed that the generation of the spots is associated with micro-explosions within the insulating material (HfO2) and with the local volatilization of the top metal electrode (Pt).

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Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions

Mas

Monaghan

Hurley

et al. 2014

IEEE Trans. Device Mater. Relib.

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Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress

Cited by 3 publications

References 5 publications

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios

Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions

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