Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Sato, Setsuko; Hiroi, Yoshimi; Yamabe, Kikuo; Kitabatake, Makoto; Endoh, Tetsuo; Niwa, Miki

doi:10.7567/jjap.53.08la01

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…212) Achievements of high-quality SiO 2 /SiC interface with the interface state density of as low as <10 11 cm -2 eV -1 213) is a good news supporting evolution of MOSFETs, while understanding of the breakdown phenomena has been advanced. 214) Progress of GaN-based power devices is also noteworthy supported by high quality GaN substrates as well as large area GaN/Si structures. A vertical MOSFET with 1.6 kV blocking voltage on a free standing GaN substrate 215) and normally-off lateral MOSFET with 825 V breakdown voltage on an 8-inch Si wafer 216) are typical examples.…”

Section: Final Remarksmentioning

confidence: 99%

Wide-bandgap semiconductor materials: For their full bloom

Fujita

2015

Jpn. J. Appl. Phys.

314

151

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Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC-and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase.What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".

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Section: Final Remarksmentioning

confidence: 99%

Wide-bandgap semiconductor materials: For their full bloom

Fujita

2015

Jpn. J. Appl. Phys.

314

151

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“…In particular, the breakdown of the SiC metal-oxide-semiconductor (MOS) structure is not well understood. Adjacent concaves always form on SiC MOS capacitors [5]. These concaves were observed after dielectric breakdown of SiC MOS capacitors, having either aluminum or polycrystalline silicon (poly-Si) gate electrodes, indicating little dependence on the gate electrode material [6].…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode

Sato

Yamabe

Endoh

et al. 2016

MSF

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The failure mechanism of a SiC metal-oxide-semiconductor capacitor with a poly-Si gate electrode was investigated by time-dependent dielectric breakdown testing under a 200-nA constant current stress. The capacitor exhibited both hard and soft breakdowns. After dielectric breakdown in both cases, adjacent concaves were observed on the capacitor with a field-emission scanning electron microscope. Additional optical beam-induced resistance changes and photo-emission analysis of a capacitor after hard-breakdown located a failure point on the periphery of a group of adjacent concaves. Cross-sectional scanning transmission electron microscope observation revealed that a narrow, vertical defect had formed at this point on the SiC substrate.

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