Initial oxidation of CuInSe2

Kazmerski, Lawrence L.; Jamjoum, O.; Ireland, P. J.; Deb, S. K.; Mickelsen, R. A.; Chen, W.

doi:10.1116/1.571040

Cited by 107 publications

(68 citation statements)

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“…The lattice constants, a and c, were 0.268 nm and 0.728 nm, respectively, in the asdeposited CIS thin films. These are smaller values than those of the previously published values of 0.578 nm and 1.172 nm, respectively [6,20]. The lattice constant, a, increased slightly in the RTA-treated CIS thin films at annealing temperatures ≥ 350°C and reached a maximum of 0.288 nm at 400°C, whereas the lattice constant, c, increased with the RTA treatment and showed a maximum of 0.776 nm at 400°C.…”

Section: Resultscontrasting

confidence: 52%

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Kim¹,

Jun²,

Cho³

2014

Journal of Electrical Engineering and Technology

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-Chalcopyrite CuInSe 2 (CIS) thin films were prepared without Se-/ S-containing gas by co-sputtering using CuSe 2 and InSe 2 selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter η decreased and the inter-planar spacing d (112) increased in the RTA-treated CIS thin films annealed at a 400°C, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ≥ 350°C. The optical band gap energy (E g ) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at 400°C due to the improved crystallinity, elevated carrier concentration and decreased In composition.

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Section: Resultscontrasting

confidence: 52%

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Kim¹,

Jun²,

Cho³

2014

Journal of Electrical Engineering and Technology

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“…The spectra were normalized to get similar intensities for the Cu2p 3/2 peak. CuInSe 2 and was attributed to the formation of a Cu 2-x Se phase [5]. With further oxidation time a second structure appears at E B = 934.8 eV connected with a satellite band that consists of two lines at E B ≈ 941 eV and 944 eV ( Fig.…”

Section: Native Oxidationmentioning

confidence: 99%

“…This second doublet structure at E B = 54.9eV is attributed to the formation of elemental Selenium Se 0 (E B = 55.1eV, [26]) and/or a Cu 2-x Se phase. For CuInSe 2 it is well known, that a Cu 2-x Se phase forms at the interface between a binary In 2 O 3 oxide phase and the ternary chalcopyrite bulk phase [5]. Kazmerski et al [5] found, that the Cu2p and Se3d The Se3d spectrum of sample #2a (Fig.…”

Section: Native Oxidationmentioning

confidence: 99%

“…Surface sensitive XPS is applied in order to study, which oxide phases form during the oxidation process. During thermal oxidation of CuInSe 2 crystals and thin films Kazmerski et al [5] found formation of mainly In 2 O 3 and some SeO 2 , but no copper oxide. Further a Cu x Se transition layer was found between the oxide layer and CuInSe 2 [5].…”

Section: Introductionmentioning

confidence: 99%

“…During thermal oxidation of CuInSe 2 crystals and thin films Kazmerski et al [5] found formation of mainly In 2 O 3 and some SeO 2 , but no copper oxide. Further a Cu x Se transition layer was found between the oxide layer and CuInSe 2 [5]. The native oxidation of CuInSe 2 takes place in the same way [6,7].…”

Section: Introductionmentioning

confidence: 99%

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In situ X-ray photoelectron spectroscopy study of the oxidation of CuGaSe2

et al. 2005

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The thermal and native oxidation of CuGaSe 2 thin films was studied by in-situ X-ray photoelectron spectroscopy (XPS). The special design of the XPS chamber allowed to measure XP-spectra under oxidizing gas atmospheres at pressures of up to 5mbar (in-situ) or in ultra high vacuum (UHV). During thermal oxidation, the formation of predominantly Ga 2 O 3 and some amount of SeO 2 were observed, but no copper oxides could be detected in the near surface region of the thin films. The same oxides were found after native oxidation in air under ambient conditions. Only after long term native oxidation for longer than four months Cu(OH) 2 was detected. An additional sodium oxide compound formed at the thin film surface, Na x O and Na 2 CO 3 after thermal and native oxidation, respectively. The amount of these sodium oxide compounds depends on the Na content on the as prepared surface. The formation of SeO 2 under humid conditions at 100°C was found to depend on the surface composition of the thin film.

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Aging Effect of a Cu(In,Ga)(S,Se)₂ Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Chantana

Nishimura

Kawano

et al. 2019

Advanced Energy Materials

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Cd‐free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of Inx(O,S)y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.

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Initial oxidation of CuInSe2

Cited by 107 publications

References 0 publications

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

In situ X-ray photoelectron spectroscopy study of the oxidation of CuGaSe2

Aging Effect of a Cu(In,Ga)(S,Se)₂ Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

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Initial oxidation of CuInSe2

Cited by 107 publications

References 0 publications

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2and InSe2Targets

In situ X-ray photoelectron spectroscopy study of the oxidation of CuGaSe2

Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis

Contact Info

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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe₂and InSe₂Targets

Aging Effect of a Cu(In,Ga)(S,Se)₂ Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis