Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate

Structural and microwave characterization of BaSrTiO3 thin films deposited on semi-insulating silicon carbide

“…In contrast, an increase of the substrate temperature can lead to a decrease of the supersaturation (for example, due to the re-evaporation of atoms from the substrate surface), which increases the probability of the nucleation of two-dimensional islands coherent with the lattice of the substrate. 36) A formation of the two-dimensional islands can be regarded as the beginning of monolayer growth. 33) The oriented two dimensional nuclei merge into a continuous film with smaller amount of structure defects in comparison with a film grown from misoriented three-dimensional islands.…”

Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

“…The oriented growth of the multi-layer BST film can be explained in terms of theory of heterogeneous nucleation of multicomponent systems. At the first 5 min of deposition when the substrate is heated to T sub = 880 • C and the diffusion of adatoms through the gaseous phase is predominant, the columnar structure of the first layer of BST film is formed [38]. Then, the decrease in T sub 800 • C determines the change of the growth mechanism and the lateral growth on "columnar basis" begins, leading to the oriented layer formation.…”

“…(i) According to the recent investigations of initial stages of BST films growth on SiC substrate [38], the mechanism of film growth is determined by a substrate temperature. As it was shown, the heating of the SiC substrate until T sub = 880 • C leads to the "growth in height", i.e., formation of high islands without spread of thicknesses, that is due to the mechanism of diffusion of adatoms through the gaseous phase is predominant.…”