Injection behavior and modeling of 100 mW broad area diode lasers

Abbas, Gregory L.; Yang, S.; Chan, V. W. S.; Fujimoto, James G.

doi:10.1109/3.169

Cited by 50 publications

(4 citation statements)

References 23 publications

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“…Presently, there are three common techniques based on semiconductor gain elements: (i) Injection-locking of a single-mode laser diode [3] by seeding light from an EGDL results typically in 60-80 mW optical power at 780 nm wavelength. (ii) Amplification in a double-pass through a broad-area emitting diode laser (BAL) [4][5][6][7]. This yields an optical output of typically 150 mW after spatial filtering.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a high-power tapered semiconductor amplifier system

Voigt¹,

Schilder²,

Spreeuw³

et al. 2001

Appl Phys B

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We have characterized a semiconductor amplifier laser system which provides up to 200 mW output after a single-mode optical fiber at 780 nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4 nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature, and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1 nW/MHz, i.e. less than 0.2 % of the optical power. Related to an optical transition linewidth of Γ/2π = 6 MHz for rubidium, this gives a background suppression of better than −82 dB. An indication of the beam quality is provided by the fiber coupling efficiency up to 59 %. The application of the amplifier system as a laser source for atom optical experiments is discussed.

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Section: Introductionmentioning

confidence: 99%

Characterization of a high-power tapered semiconductor amplifier system

Voigt¹,

Schilder²,

Spreeuw³

et al. 2001

Appl Phys B

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“…Broad area quantum well amplifiers have been investigated theoretically in the past [3] and shown potential for high power scaling of semiconductor sources [4]. Experimentally, injection-locked gain-guided arrays [5], multiple-pass reflective broad area devices [6], and single-pass amplifiers [7] have operated to moderate coherent power levels of a few hundred mW. Recently, broad area semiconductor optical amplifiers have demonstrated coherent output powers of several Watts [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Operating characteristics of broad area traveling wave semiconductor amplifiers

Mehuys

Goldberg

1992

Laser Diode Technology and Applications IV

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Broad area traveling wave amplifiers in single-pass and double-pass configurations have been characterized using both analytical and experimental methods. Amplified emission up to 12.0 W in a nearly-diffraction-limited beam was achieved from double-pass amplifiers under short-pulse conditions, and 7.7 W in a nearly-diffraction-limited beam was achieved from single-pass amplifiers under long-pulse conditions.

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“…The most important challenge in developing this technology is to overcome this obstacle in beam performance. Several groups have developed methods of improving the beam divergence of LDs using strategies such as injection locking, 1,2) phase conjugate feedback, 3,4) and external cavities. 5,6) An off-axis external-cavity technique with a stripe mirror has been developed for suppressing the beam divergence of a high-power LDA.…”

mentioning

confidence: 99%

Effects of Reflective Coatings on Performance of Divergence-Narrowed External-Cavity Laser-Diode Arrays

Zheng¹,

Miyajima²,

Suzuki³

et al. 2005

Jpn. J. Appl. Phys.

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A Frank-Kasper-type (FK-type) icosahedral phase (i-phase) has been found to form in the Mg-Al-Pt system of Mg 45 Al 42 Pt 13 composition. The i-phase is formed by heating an amorphous phase produced by a melt-spinning technique up to 673 K. We have also investigated the formation of the FK-type i-phase in the ternary Mg-Al-X (X = Co, Ni, Rh and Au) systems and find no trace of the FK-type i-phase. The formation criteria for the FK-type i-phase have been discussed in terms of the electron number in the outer shell, the atomic size and the electronegativity of the third element in Mg-Al-X.

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Injection behavior and modeling of 100 mW broad area diode lasers

Cited by 50 publications

References 23 publications

Characterization of a high-power tapered semiconductor amplifier system

Characterization of a high-power tapered semiconductor amplifier system

Operating characteristics of broad area traveling wave semiconductor amplifiers

Effects of Reflective Coatings on Performance of Divergence-Narrowed External-Cavity Laser-Diode Arrays

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