Inkjet-printed co-continuous mesoporous oxides for high-current power transistors

Devabharathi, Nehru; Mondal, Sandeep Kumar; Dasgupta, Subho

doi:10.1039/c9nr04876f

Cited by 15 publications

(13 citation statements)

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“…On the other hand, as has been stated, the high surface-to-volume ratio mesostructures are primarily achieved via dip coating and occasionally using spin coating methods. There are recent reports of inkjet-printed co-continuous mesoporous oxides, however, only in the context of electronic device application. , Therefore, in this study, we examine for the first time printed mesoporous oxides for gas sensor applications, which in turn have resulted in an at least 2-fold superior response to nitrogen dioxide, when compared to the best reports that can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection

Devabharathi

Umarji

Dasgupta

2020

ACS Appl. Mater. Interfaces

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Printed sensors are among the most successful groups of devices within the domain of printed electronics, both in terms of their application versatility and the emerging market share. However, reports on fully printed gas sensors are rare in the literature, even though it can be an important development toward fully printed multisensor platforms for diagnostics, process control, and environmental safety-related applications. In this regard, here, we present the traditional tin oxide-based completely inkjet-printed co-continuous and mesoporous thin films with an extremely large surface-to-volume ratio and then investigate their NO 2 sensing properties at low temperatures. A method known as evaporation-induced self-assembly (EISA) has been mimicked in this study using pluronic F127 (PEO 106 -PPO 70 -PEO 106 ) as the soft templating agent and xylene as the micelle expander to obtain highly reproducible and spatially homogeneous co-continuous mesoporous crystalline SnO 2 with an average pore diameter of the order of 15−20 nm. The fully printed SnO 2 gas sensors thus produced show high linearity for NO 2 detection, along with extremely high average response of 11,507 at 5 ppm NO 2 . On the other hand, the sensors show an ultralow detection limit of the order of 20 ppb with an easy to amplify response of 31. While the excellent electronic transport properties along such co-continuous, mesoporous structures are ensured by their well-connected (co-continuous) ligaments and pores (thereby ensuring high surface area and high mobility transport at the same time) and may actually be responsible for the outstanding sensor performance that has been observed, the use of an industrial printing technique ascertains the possibility of high-throughput manufacturing of such sensor units toward inexpensive and widerange applications.

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Section: Introductionmentioning

confidence: 99%

Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection

Devabharathi

Umarji

Dasgupta

2020

ACS Appl. Mater. Interfaces

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“…Similar mesoporous structures have earlier been achieved via inkjet printing of various binary and doped oxides. [ 29 ] Here, in order lower the process temperature to 350 °C while maintaining a large (in‐plane) pore size and reasonable structural ordering, a polymer based on polyisobutylene (PIB) and poly(ethylene oxide) (PEO) was used. This amphiphilic structure‐directing agent has a hydrophilic (PEO) and a hydrophobic (PIB) component.…”

Section: Resultsmentioning

confidence: 99%

“…The non-standard device geometry involves printing of an additional metal layer (e.g., an inkjet-printed silver layer) on top of the mesoporous semiconductor channel. [21,29,39,40] The detailed step-by-step fabrication of the edge-FET NMOS devices is summarized in Figure 2a-d. The printed silver layer must maintain a spatial overlap with the source and drain electrodes (as shown in Figure 2b), thus reducing the effective channel lengths to only the thickness of the printed In 2 O 3 film.…”

Section: Resultsmentioning

confidence: 99%

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

Devabharathi

Pradhan

Priyadarsini

et al. 2022

Adv Materials Inter

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Significant developments have also been noted in the printed/flexible electronics domain, where the performance of solution-processed thin film transistors (TFTs) may now easily be compared with their vacuum deposited (e.g. sputtered or pulsed-laser deposited) counterparts. [6] Notably, these solutionprocessed devices are of high interest for a wide range of portable electronic or Internet of Things (IoT) related devices. However, any digital electronic component essentially requires complementary metal oxide semiconductor (CMOS) technology to ensure high noise immunity and low power consumption. [7] Unfortunately, it is only the oxygen deficient n-type oxide semiconductors, the performance of which nearly matches that of polycrystalline silicon, whereas the performance of the p-type materials is substantially lower in comparison. In fact, the problem associated with the absence of matching/comparable p-type oxide semiconductors range beyond the CMOS electronics to other p-n junction devices, for example, solar cells. Here, the transport properties of p-type oxide semiconductors are primarily limited by their highly localized oxygen 2p orbitals in the valence band maximum (VBM), deep VBM, rigorous environmental and fabrication conditions and difficulties in high-quality film formation. [8][9][10][11] It should also be noted that the examples of solutionprocessed p-type oxide semiconductors are essentially limited to NiO, Cu x O, SnO, and delafossite-type CuMO 2 (M = Al and Cr). [8][9][10][11] Among these, Cu x O has been the most promising candidate owing to its high theoretical Hall mobility, non-toxicity, suitable optical properties, and low cost. [12,13] Although it has been a well-known semiconductor even in the pre-silicon era, resurgent interest in Cu 2 O has been spurred when Matsuzaki et al. demonstrated a Hall mobility of 90 cm 2 V −1 s −1 for epitaxial Cu 2 O films on MgO in 2008. [14] The subsequent studies have reported about p-type Cu x O deposition via sputtering, [14] pulsed laser deposition [15,16] and thermal oxidation techniques. [17] Solution-based fabrication techniques involving either spin/spray coating or inkjet printing have also been reported. [15,[18][19][20][21][22][23] However, when it comes to Cu x O-based TFTs, the typical process temperatures (≥400 °C) or reported operating voltages have always been very high. [24][25][26] Oxide semiconductors are becoming the materials of choice for modern-day display industries. The performance of solution-processed oxide thin film transistors (TFTs) has also improved dramatically over the last few years. However, while oxygen deficient n-type semiconductors can demonstrate excellent electronic transport, the performance of p-type materials has remained unsatisfactory. Consequently, only the n-type semiconductor-based pseudo-complementary metal oxide semiconductor (CMOS) technology has attracted tremendous interests recently; yet, the high power dissipation remains a problem. Here, this work demonstrates all-oxide CMOS invertors with high-performa...

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“…It may be noted here that the On-currents and current density values that are reported in this study are nearly an order of magnitude higher than any printed long-channel TFTs that can be found in the literature, even when all the different printable semiconductor technologies are considered together. Of course, the printed vertical field-effect transistors (vFETs) may have resulted in higher current densities, [30,67,68] however, they are nontrivial to fabricate and take advantage of the area of overlap, as opposed to the standard metal oxide semiconductor field-effect transistor (MOSFET) geometry that are typically found in common electronic circuits. The devices have been measured with a 50 ms delay time, which then translates to a gate voltage sweep rate of 0.5 V s −1 ; nonetheless, the observed hysteresis in the transfer curves has been very low/nearly negligible in most cases (Figure 3).…”

Section: Resultsmentioning

confidence: 99%

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

Cherukupally

Divya

Dasgupta

2020

Adv Elect Materials

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kinds of solid electrolytes [29-40] have been used as the gate insulators. Within this solution processed/printable semiconductor technologies, inorganic oxides hold paramount positions owing to their unparalleled transport properties, abundance and low cost. [41-43] In fact, the performance of printed oxide TFTs have steadily improved over the recent times and have certainly become substantially superior to their organic counterparts. In this regard, among the oxide semiconductors of choice, indium oxide have received specific attention due to their chemical and environmental stability resulting in high device lifetime and particularly high carrier mobility which can be easily reproduced even when they are solution processed. [44-47] In the present study, the indium oxide precursor ink has long been adjusted for its easy printability, homogeneous film formation and improved electronic transport/carrier mobility values. With this thoroughly optimized semiconductor material, different solid electrolytic insulators in the form of CSPEs and ion gels have been examined for their device performance and relative environmental stability. Recently, solution processed high-k oxide dielectrics have also shown good promise with low process temperature and device performance. However, high performance solid electrolytes may always offer crucial advantage in terms of semiconductor/insulator interface quality, high gating efficiency, easy printability, room temperature processability and high capacitance values enabling extremely low operating voltages of the TFTs (<2 V). [38,48-51] The first notable instance of employing electrolytes in fieldeffect transistors (FETs) can be traced back to the work carried out by Bergveld in 1970, which has later been used as ion-sensitive FET sensors. [52] Tardella and Chazalviel in 1985 studied nonaqueous electrolytes. [53] One of the earliest examples of solid electrolyte has been poly(ethylene oxide) (PEO) doped with lithium salt. [54] In this regard, Frisbie and co-workers had reported solid polymer electrolyte based on mixture of lithium perchlorate (LiClO 4) salt in a PEO polymer matrix to be used as gate insulator in electronic devices. [55,56] As a result of the increased cross-linking points due to the interaction between the Li + and the PEO chains, the ion transport in these electrolytes is primarily dependent on the temperature and the Printed oxide thin film transistors (TFTs) have outperformed their organic counterparts in the recent past; printable solid electrolytic insulators have also emerged as a suitable alternative to oxide dielectrics. In the present study, multiple composite solid polymer electrolytes (CSPEs) and an easyto-formulate ion gel are fabricated and characterized for their double-layer capacitance (C DL) values and the quality of electrostatic coupling. In the next step, alongside printed In 2 O 3 as the semiconductor channel, the performance of the solid electrolytes is evaluated using printed top-gate TFTs. The semiconductor ink formulation and the device ar...

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Inkjet-printed co-continuous mesoporous oxides for high-current power transistors

Abstract: Inkjet-printed co-continuous mesoporous structures have been demonstrated for a large set of functional oxides. Channel-length-independent electronic transport was achieved when the mesoporous oxides were used to obtain printed, vertical edge FETs.

Cited by 15 publications

References 65 publications

Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection

Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

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Inkjet-printed co-continuous mesoporous oxides for high-current power transistors

Abstract: Inkjet-printed co-continuous mesoporous structures have been demonstrated for a large set of functional oxides. Channel-length-independent electronic transport was achieved when the mesoporous oxides were used to obtain printed, vertical edge FETs.

Cited by 15 publications

References 65 publications

Fully Inkjet-Printed Mesoporous SnO2-Based Ultrasensitive Gas Sensors for Trace Amount NO2 Detection

Fully Inkjet-Printed Mesoporous SnO2-Based Ultrasensitive Gas Sensors for Trace Amount NO2 Detection

Inkjet‐Printed Narrow‐Channel Mesoporous Oxide‐Based n‐Type TFTs and All‐Oxide CMOS Electronics

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

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Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection

Fully Inkjet-Printed Mesoporous SnO₂-Based Ultrasensitive Gas Sensors for Trace Amount NO₂ Detection