Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Manuel, José; Koch, Christoph T.; Özdöl, V. B.; Sigle, Wilfried; Aken, Peter A. van; Garcı́a, R.; Morales, F. M.

doi:10.1111/jmi.12312

Cited by 4 publications

(3 citation statements)

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“…They are both lattice matched to GaN, and their calculated band gaps are direct and larger than GaN, 4.63 and 3.74 eV, respectively, which may be potentially suitable for UV optoelectronic applications. It should be noted that the formation of quaternary wurtzitic nitrides has been scarcely reported as claimed in their study, with only a few examples such as CaAlSiN 3 and CaGaSiN 3 , as well as alloyed thin films of Al x Ga 1– x – y In y N , and ZnSn x Ge 1– x N 2 . , …”

Section: Introductionmentioning

confidence: 78%

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

2017

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We developed a new quaternary wurtzitic nitride system by formation of the solid solution between ZnGeN 2 and GaN. Near stoichiometric and monophasic powder samples in the composition Zn 1−x Ge 1−x Ga 2x N 2 (x ≤ 0.50) were obtained by the reduction−nitridation synthesis conducted at 900 °C. The results of crystal structure refinement clearly revealed that the cation ordering in the structure of ZnGeN 2 (Pna2 1 ) tends to disappear by introducing Ga into the lattice, and the structure transforms to a simple wurtzite phase (P6 3 mc) with the composition of x ≥ 0.33. The observed structural evolution was further confirmed by the results of 71 Ga solid-state nuclear magnetic resonance (NMR) spectroscopy, showing an unsplit single peak observed for x ≥ 0.33. The dissolution of GaN into ZnGeN 2 also resulted in a marked narrowing of the band gap, from the ultraviolet region of 3.42 eV to the visible-light range of 3.02−3.05 eV, depending scarcely on the value of x. The results of photocatalytic test reactions for water splitting showed that the synthesized Zn 1−x Ge 1−x Ga 2x N 2 solid solution possessed the H 2 evolution rate of 2.8−3.6 μmol/h and the relatively high O 2 evolution rate of 100.4−126.6 μmol/h, as well as the capability for overall water splitting under the visible-light irradiation of λ > 400 nm.

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Section: Introductionmentioning

confidence: 78%

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

2017

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“…As a wide-band gap semiconductor, GaN has attracted wide attention for its applications in blue optoelectronic, high-power, and high-frequency devices. , To engineer the band gap and band structure of GaN for ultraviolet applications, ternary AlGaN (Al x Ga 1– x N) and quaternary AlGaInN (Al x Ga 1– x – y In y N) − alloys have been synthesized. GaN/AlGaN and GaN/AlGaInN superlattices are grown for multiquantum-well-based ultraviolet light-emitting diodes (LEDs). , Although this is the most established method to engineer the band structure of GaN-based devices, the composition nonuniformity and the GaN/AlGaInN lattice-mismatch hindered the improvement of device performance .…”

Section: Introductionmentioning

confidence: 99%

“…GaN/AlGaN and GaN/AlGaInN superlattices are grown for multiquantum-well-based ultraviolet light-emitting diodes (LEDs). , Although this is the most established method to engineer the band structure of GaN-based devices, the composition nonuniformity and the GaN/AlGaInN lattice-mismatch hindered the improvement of device performance . (Note that the homogeneous AlGaInN alloys had been successfully fabricated in recent studies. − )…”

Section: Introductionmentioning

confidence: 99%

Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN

et al. 2015

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The search for new direct bandgap, earth-abundant semiconductors for efficient, high-quality optoelectronic devices, as well as photovoltaic and photocatalytic energy conversion has attracted considerable interest. One methodology for the search is to study ternary and multiternary semiconductors with more elements and more flexible properties. Cation mutation such as binary → ternary → quaternary for ZnS → CuGaS2 → Cu2ZnSnS4 and ZnO → LiGaO2 → Li2ZnGeO4 led to a series of new quaternary chalcogenide and oxide semiconductors with wide applications. Similarly, starting with GaN, ternary nitrides such as ZnSnN2 and ZnGeN2 have been designed and synthesized recently. However, quaternary nitride semiconductors have never been reported either theoretically or experimentally. Through a combination of the Materials Genome database with the first-principles calculations, we designed a series of quaternary nitride compounds I–III–Ge2N4 (I = Cu, Ag, Li, Na, K; III = Al, Ga, In) following the GaN → ZnGeN2 → I–III–Ge2N4 mutation. Akin to Li2ZnGeO4, these quaternary nitrides crystallize in a wurtzite-derived structure as their ground state. The thermodynamic stability analysis shows that while most of them are not stable with respect to phase separation, there are two key exceptions (i.e., LiAlGe2N4 and LiGaGe2N4), which are stable and can be synthesized without any secondary phases. Interestingly, they are both lattice-matched to GaN and ZnO, and their band gaps are direct and larger than that of GaN, 4.36 and 3.74 eV, respectively. They have valence band edges as low as ZnO and conduction band edges as high as GaN, thereby combining the best of GaN and ZnO in a single material. We predict that flexible and efficient band structure engineering can be achieved through forming GaN/LiAlGe2N4/LiGaGe2N4 heterostructures, which have tremendous potential for ultraviolet optoelectronics.

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Transmission electron microscopy of epitaxial semiconductor materials and devices

Dong,

Bai,

Deng

et al. 2024

J. Phys. D: Appl. Phys.

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The transmission electron microscope (TEM) is a powerful imaging, diffraction and spectroscopy tool that has revolutionized the field of microscopy. It has contributed to numerous breakthroughs in various scientific disciplines. TEM-based techniques can offer atomic resolution as well as elemental analysis, which benefit the study of epitaxial semiconductors and their related optoelectronic devices on the atomic scale. The design and optimization of the device performance depend on three key factors: the control of strain at nanometer scale, control of the formation and propagation of defects as well as the control of local electronic properties. Manipulation and optimization are only possible if the key factors can be characterized precisely. Herein, the TEM techniques for strain analysis, defect characterization and bandgap evaluation are reviewed and discussed. Lately, with the development of in-situ TEM techniques, researchers have been able to observe dynamic processes and study the behaviour of materials and devices under realistic conditions (in gaseous atmosphere or in liquids, at elevated or cryogenic temperatures, under strain, bias or illumination) in real-time with extremely high spatial resolution. This review explores the impact and significance of in-situ TEM in the field of semiconductors.

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Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Cited by 4 publications

References 49 publications

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN

Transmission electron microscopy of epitaxial semiconductor materials and devices

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Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Cited by 4 publications

References 49 publications

Quaternary Wurtzitic Nitrides in the System ZnGeN2–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN2–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Cation-Mutation Design of Quaternary Nitride Semiconductors Lattice-Matched to GaN

Transmission electron microscopy of epitaxial semiconductor materials and devices

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Product

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Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst