InN layers grown by MOCVD on substrates

Jia, Caihong; Chen, Yan Hong; Zhou, Xuliang; Liu, G.H.; Guo, Yu; Liu, X.L.; Yang, Shuangqiao; Wang, Z.G.

doi:10.1016/j.jcrysgro.2009.10.066

Cited by 10 publications

(7 citation statements)

References 23 publications

(25 reference statements)

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“…2. A flake-like growth mode is found in the w-InN films, which is similar to that of w-InN films on (111) STO substrates [16]. However, it turns into a long strip shape in the same direction in zb-InN films, in accordance with the rather different lattice mismatch in the two vertical directions of [100] STO and [011] STO .…”

Section: Resultssupporting

confidence: 65%

Phase transition of InN films via trimethylindium flows

Hanson¹,

Motengen²

2020

ETN

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Wurtzite (w) and zincblende (zb) InN films have been grown on (011) SrTiO3 (STO) substrates by metal- organic chemical vapor deposition, the epitaxial relation- ships and optical properties are characterized by X-ray diffraction (XRD), absorption and photoluminescence (PL). Based on XRD θ –2θ and Φ scanning results, the epi- taxial relationships between (w- and zb-) InN films and STO substrates are determined, that is, (0001)[1120]w-InN (011)[100]STO and (100)[011]zb-InN //(011)[100]STO. Compared with the w-InN films, the zb-InN films exhibit a red shift in absorption edge and PL spectra, and a much nar- rower and stronger PL spectrum, implying a better optical quality of zb-InN films. The structure transition is supposed to be due to the difference in atom and bond areal density between the crystal plane of w-InN(0001) and zb-InN(100).

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Section: Resultssupporting

confidence: 65%

Phase transition of InN films via trimethylindium flows

Hanson¹,

Motengen²

2020

ETN

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“…InN is a kind of piezoelectric crystal, so the strain existing in the InN overlayer of the heterojunction will induce piezoelectric field and affect the results. According to the previous reports, we know the lattice mismatch between InN and STO is larger than 9.8% inferred from the Φ scanning patterns of InN film grown on STO [ 10 ].The majority of the strain relaxes within the first few monolayers in the InN film, so the InN layer can be approximately treated as completely relaxed and this approximation should not introduce much error in our result. In addition, InN always exhibits obvious electron accumulation at its surface and causes the band bending downward (approximately 0.6 eV) near the surface [ 23 - 25 ].…”

Section: Resultsmentioning

confidence: 99%

“…InN films were grown on STO substrate with the trimethylindium and ammonia as the precursors and nitrogen as the carrier gas. Further details of the growth parameters are reported elsewhere [ 10 ]. XPS measurements were performed on a VG MKII XPS instrument with Al Kα ( hv = 1486.6eV) as the x-ray radiation source, which had been calibrated on work function and Fermi energy level ( E F ).…”

Section: Methodsmentioning

confidence: 99%

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Zhang

Wang

et al. 2011

Nanoscale Res Lett

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The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

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“…The thick and thin heterostructures of InN/BTO were deposited by metal-organic chemical vapor deposition (MOCVD) at 520°C. More growth condition details of the InN layer can be found in our previous report [9]. XPSs were performed on a PHI Quantera SXM instrument with Al K α ( hν = 1486.6 eV) as the X-ray radiation source, which had been carefully calibrated on work function and Fermi energy level ( E F ).…”

Section: Methodsmentioning

confidence: 99%

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

et al. 2011

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X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO 3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

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InN layers grown by MOCVD on substrates

Cited by 10 publications

References 23 publications

Phase transition of InN films via trimethylindium flows

Phase transition of InN films via trimethylindium flows

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

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