Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Jia, Caihong; Chen, Yonghai; Guo, Yan; Liu, Xianglin; Yang, Shuangqiao; Zhang, Weifeng; Wang, Zhanguo

doi:10.1186/1556-276x-6-316

Cited by 22 publications

(11 citation statements)

References 23 publications

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“…The Ti 2p and Ga 2p XPS CL spectra of the bulk samples of BTO and GaN, respectively, are shown in figures 4 and 5, along with the VBM positions of the bulk samples. The CL and VBM positions of BTO as well as the GaN are comparable to the previously reported values [13,14]. By comparing the spectra recorded on the BTO and GaN samples, it was found that the Ti 2p peak in the BTO/GaN heterojunction sample shifted by ~0.82 eV and the Ga2 p CL is shifted by 0.67 Ev, as shown in figure 6.…”

Section: Band Alignment Studies Of Bto/gan Heterojunctionsupporting

confidence: 86%

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Bhat¹,

Pandey²,

Krupanidhi³

2017

J. Phys. D: Appl. Phys.

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We report on the ferroelectric polarization-induced switchable interfacial coupling modulations in BaTiO 3 /GaN heterojunction transport behaviour. The ferroelectric barium titanate, BaTiO 3 (BTO) was integrated with polar semiconductor gallium nitride (GaN). BTO with a tetragonal structure was deposited on a wurtzite (0 0 0 1) epitaxial GaN/c-Al 2 O 3 substrate by pulsed laser deposition, which was further confirmed by x-ray diffraction and Raman spectroscopy. BTO/GaN heterojunctions with resistive switching behaviour exhibited modulations in transport characteristics due to the interfacial coupling. The ferroelectric nature and interfacial coupling effect of this heterojunction was confirmed with the help of piezoresponse force microscopy. A valence band offset of 0.82 eV and conduction band offset of 0.62 eV were obtained for BTO/GaN heterojunctions by x-ray photo-electron spectroscopy. This interfacial coupling phenomenon was analysed and its effect on the carrier conduction in the heterojunction was investigated by band alignment studies.

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Section: Band Alignment Studies Of Bto/gan Heterojunctionsupporting

confidence: 86%

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Bhat¹,

Pandey²,

Krupanidhi³

2017

J. Phys. D: Appl. Phys.

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“…Truly, the VBM value is sensitive to the choice of points on the leading edge used to obtain the regression line. 30,31 Several different sets of points were selected over the linear region of the leading edge to perform regressions, and the uncertainty of DE v and DE c values were found to be in the range of 0.05-0.1 eV in the present work. Figure 1(a) shows the VBM for the (100)Ge film.…”

Section: A Hfo 2 /(100)ge Heterointerfacementioning

confidence: 99%

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Hudait

Zhu

2013

Journal of Applied Physics

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Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si J. Vac. Sci. Technol. B 33, 01A101 (2015) Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO 2 ) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, DE v values of HfO 2 relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, DE V ð100ÞGe > DE V ð111ÞGe > DE V ð110ÞGe, was obtained related to Ge orientation. Also, the conduction band offset, DE c relation, DE c ð110ÞGe > DE c ð111ÞGe > DE c ð100ÞGe related to Ge orientations was obtained using the measured bandgap of HfO 2 on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p-and n-channel metal-oxide field-effect transistor for low-power application.

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“…Truly, the VBM value is sensitive to the choice of points on the leading edge used to obtain the regression line. 45,46 Several different sets of points were selected over the linear region of the leading edge to perform regressions, and the uncertainty of DE v and DE c values were found to be in the range of 0.05-0.1 eV in the present work. Figure 6(a) shows the VBM for the (100)Ge film.…”

Section: Al 2 O 3 /(100)ge Heterointerfacementioning

confidence: 99%

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait

Zhu

Maurya

et al. 2013

Journal of Applied Physics

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Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Cited by 22 publications

References 23 publications

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Cited by 22 publications

References 23 publications

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

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Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices

Polarization-induced interfacial coupling modulations in BaTiO₃/GaN heterojunction devices