InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

Reilly, Caroline E.; Keller, S.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.3389/fmats.2021.647936

Cited by 5 publications

(3 citation statements)

References 49 publications

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“…In terms of modern technology, the development of group III-V LEDs now includes quantum wells, [62][63][64] quantum dots, [65,66] quantum wires, [67] and superlattice structures. [68] The long wavelength infrared III-V photodetectors also developed into attractive candidates for night vision cameras, thermal remote sensing for atmospheric pollution, and chemical sensing and detection for biological and chemical warfare.…”

Section: Gan-based Semiconductor Devicesmentioning

confidence: 99%

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

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Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium‐based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra‐purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra‐pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current‐day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized

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Section: Gan-based Semiconductor Devicesmentioning

confidence: 99%

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

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“…In the introductory part, TMI was first presented as a suitable precursor for thin film deposition of InN using different techniques. 1,10,13,[22][23][24][27][28][29] The pyrolysis of this organometallic compound was first studied by Jacko & Price, as early as in 1964. 41 In their study, they could confirm the homogeneous nature of the process in a toluene carrier flow system, also reporting that the TMI decomposition should occur through the sequential dissociation of its In-CH3 bonds to form methylindium (MI, InCH3) and CH3 radicals, i.e.…”

Section: 1-trimethylindiummentioning

confidence: 99%

“…Industrial applications require the production of InN thin films with controlled epitaxy and good quality, i.e., uniformity and fine crystallinity, through a process of thin film deposition. 10,22 In this context, InN has been previously deposited on Si(100), 10,[23][24][25] sapphire(0001), 13,26 Al2O3 (0001) 24 and 4H/6H-SiC (0001) 22,27,28 substrates by using chemical vapour deposition (CVD), 29 molecular beam epitaxy (MBE) 11,13,27 and atomic-layer deposition (ALD) techniques, 10,[22][23][24][25]28,30,31 among others. 1 The latter technique is particularly interesting for enabling a well-controlled growth with layer-by-layer formation, where the molecular precursors are inserted into the gas chamber at different time slots.…”

Section: -Introductionmentioning

confidence: 99%

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Damas¹,

Rönnby

Pedersen

et al. 2023

Preprint

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Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition (ALD) techniques have been previously employed for InN growth at low temperatures (typically < 350 C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favour the precursor decomposition in gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in gas phase, namely trimethylindium (TMI) and tris(N,N-diisopropyl-2-dimethylamido-guanidinato) (III) (ITG), by means of thermodynamic and kinetic modelling. According to the results, at T= 593 K, TMI should exhibit partial decomposition of ~8% after 400 s to first generate methylindium (MI) and ethane (C2H6), a percentage that increases to ~34% after 1 hour of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition experiment (< 10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler and it will slowly decompose as it is evaporated during the deposition process. At T= 300 C, the decomposition is a fast process that reaches 90% completeness after 1 s, and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors.

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Heavy metal-free colloidal quantum dots: preparation and application in infrared photodetectors

Zhang,

Mu,

Zhang

et al. 2024

J. Mater. Chem. C

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InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

Cited by 5 publications

References 49 publications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Thermal Decomposition of Trimethylindium and Indium Trisguanidinate Precursors for InN Growth: An Ab-Initio and Kinetic Modelling Study

Heavy metal-free colloidal quantum dots: preparation and application in infrared photodetectors

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