Innovative micromachined microwave switch with very low insertion loss

Chang, Chienliu; Chang, Pei‐Zen

doi:10.1016/s0924-4247(99)00218-6

Cited by 77 publications

(57 citation statements)

References 10 publications

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“…Most recently, Au/Cr/Si multilayer or "multimorph" structures have been utilized in micro-electro-mechanical systems (MEMS). Researched applications include: reflective optical structures such as mirrors [4], optical detectors [5], optical satellite navigation sensors [6], DC electrical relays and contacts [7], radio frequency (RF) components including switches [8] or variable capacitors [9], chemical [10] or biological [11] sensors, and vertical [12] or lateral [13] actuators. Study of Au/Cr/Si multimorphs may also help to understand the behavior of more basic structures, such as gold metallic traces, gold interconnect wire bond pads, or freestanding gold films.…”

Section: Introductionmentioning

confidence: 99%

Thermo-mechanical evolution of multilayer thin films: Part I. Mechanical behavior of Au/Cr/Si microcantilevers

et al. 2007

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Section: Introductionmentioning

confidence: 99%

Thermo-mechanical evolution of multilayer thin films: Part I. Mechanical behavior of Au/Cr/Si microcantilevers

et al. 2007

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“…In recent years, many switches with bridge much wider than t-line (usually W b > 3W t ) have been developed [10,11] to achieve low actuation voltage and high isolation. Meanwhile, the bridge width is usually smaller than 200 µm to make a smooth contact area of bridge and t-line in down-state position.…”

Section: The Simulation Results Versus Different Widths Of T-line Andmentioning

confidence: 99%

“…Therefore, reducing the insertion loss of MEMS switch as low as possible is still necessary and considered as an important approach to reducing the insertion loss of whole multi-switch system. Several methods have been established to reduce the insertion loss of MEMS switch [10,11], but they usually have some impacts on other properties, such as isolation and actuation voltage. The conventional switch has a dielectric layer on the transmission line (t-line).…”

Section: Introductionmentioning

confidence: 99%

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

Chen

Zhang

2011

Sci. China Inf. Sci.

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Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the influence of switch's structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge's lower surface can be expected to have broad applications in the future. CitationChen K L, Zhang J W. Comparison of the RF MEMS switches with dielectric layers on the bridge's lower surface and on the transmission line.

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“…If there is no corresponding Si processing way, MEMS devices cannot be accomplished. [8] So when design the MEMS devices, the fabricating process should be taken into consideration first. In 1980, K.E.…”

Section: Switch Fabricationmentioning

confidence: 99%

RF-MEMS Switch Design and Analysis with Photon Crystal Structure

Song¹,

Wu²

2015

IJCA

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In this paper, a new structured switch based on photon crystal is designed, whose structure is notable in enhancing RF system performances. Experiment demonstrates that the new structure switch is of excellent transmission characteristics relative to average structures. In the end, the switch S parameters' analysis and some design rules are given. When T=50μm, the inserting wave loss is reduced by 20%, and the signal transmission efficency can be improved greatly.

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Innovative micromachined microwave switch with very low insertion loss

Cited by 77 publications

References 10 publications

Thermo-mechanical evolution of multilayer thin films: Part I. Mechanical behavior of Au/Cr/Si microcantilevers

Thermo-mechanical evolution of multilayer thin films: Part I. Mechanical behavior of Au/Cr/Si microcantilevers

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

RF-MEMS Switch Design and Analysis with Photon Crystal Structure

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