Thermo-mechanical evolution of multilayer thin films: Part I. Mechanical behavior of Au/Cr/Si microcantilevers

Miller, David C.; Herrmann, Cari F.; Maier, H.; George, Steven M.; Stoldt, Conrad R.; Gall, Ken

doi:10.1016/j.tsf.2006.01.046

Cited by 24 publications

(21 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The nonlinear curvature-temperature relation during heating of the first cycle is mainly attributed to the nonlinear stress relaxation caused by grain growth. Similar curvature behavior due to grain growth has been observed for Cu thin films [14,15]. As grain growth proceeds to eliminate grain boundaries and reduce the excess volume, it is favored when the average stress in the Cu vias is compressive during heating [16].…”

Section: Microstructure Analysissupporting

confidence: 64%

Thermomechanical characterization and modeling for TSV structures

Jiang

Ryu

Zhao

et al. 2014

AIP Conference Proceedings

View full text Add to dashboard Cite

Abstract. Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measurements of the thermal stresses in TSV structures and analyses of interfacial reliability. The micro-Raman measurements were made to characterize the local distribution of the near-surface stresses in Si around TSVs. On the other hand, the precision wafer curvature technique was employed to measure the average stress and deformation in the TSV structures subject to thermal cycling. To understand the elastic and plastic behavior of TSVs, the microstructural evolution of the Cu vias was analyzed using focused ion beam (FIB) and electron backscattering diffraction (EBSD) techniques. Furthermore, the impact of thermal stresses on interfacial reliability of TSV structures was investigated by a shear-lag cohesive zone model that predicts the critical temperatures and critical via diameters.

show abstract

Section: Microstructure Analysissupporting

confidence: 64%

Thermomechanical characterization and modeling for TSV structures

Jiang

Ryu

Zhao

et al. 2014

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…The nonlinear curvature-temperature relation during heating of the first cycle is mainly attributed to the nonlinear stress relaxation caused by grain growth. Similar curvature behavior due to grain growth has been observed for Cu thin films [13,14]. As grain growth can eliminate grain boundaries and reduce the excess volume, it is favored when the average stress in the Cu vias is compressive during heating [15].…”

Section: Microstructure Analysismentioning

confidence: 69%

Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias

Jiang

Ryu

Zhao

et al. 2013

Microelectronics Reliability

View full text Add to dashboard Cite

“…To clarify, material stabilization occurring during thermal cycling is common in thin films. Stabilization is motivated by mechanisms including grain growth, recrystallization, or (inter-/intra-) diffusion [37,95,96]. Material stabilization typically results in a complicated Ä vs. T profile during the first thermal cycle.…”

Section: Wafer Curvaturementioning

confidence: 99%