2014
DOI: 10.1063/1.4881348
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Thermomechanical characterization and modeling for TSV structures

Abstract: Abstract. Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to meet the future technology requirements. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper presents experimental measu… Show more

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Cited by 3 publications
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