Innovative Organic MEH-PPV Heterojunction Device Made by USP and PVD

Abstract

An Al/p-Si/poly[2-methoxy-5-(2-ethylhexoxy)-p-phenylenevinylene] (MEH-PPV)/Ag organic heterojunction has been prepared using homemade ultrasonic spray pyrolysis (USP) equipment for deposition of the organic thin film and physical vapor deposition (PVD) for the metallic contacts. The organic layer produced on glass was analyzed by optical and morphological methods. The bandgap of the organic thin film was found to be $ 2.03 eV with a thickness of around 140 nm, using ultraviolet-visible (UV-Vis) and scanning electron microscopy (SEM) characterization, respectively. The amorphous nature of the MEH-PPV polymer was confirmed by its x-ray diffraction pattern. To determine the electrical parameters, the heterojunction based on MEH-PPV was characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark at room temperature. The ideality factor and barrier height of the organic heterojunction were found to be 3.6 eV and 0.56 eV to 0.59 eV, respectively, with an average series resistance of 94.39 X, based on the I-V characteristics. The barrier height was also calculated based on the capacitance-voltage measurements, yielding slightly different results due to the applied frequencies of 10 kHz (/ B ¼ 0:50) and 1 MHz ð/ B ¼ 0:74Þ, respectively.

Optical and Electrical properties of organic Aluminum phthalocyanine based thin films for organic electronics.

“…Rectifying behavior is important assessed by RR rectifying ratio (RR=I(+3V/-3V)) found to be 80482. Ideality factor is extracted by using of slope in the linear portion expressed as [19];…”

Structural and Morphological Characterization of MEH-PPV/Ag Composite

“…Since the finding of high conductance in doped polyacetylene [40], several researchers have focused their attention on these polymers. The Nobel Prize in Chemistry was given to Alan J. Heeger, Alan G. MacDiarmid and Hideki Shirakawa in 2000 for their work on this finding [41].…”

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

“…[18] As these polymers can positively affect the electronic parameters of the Schottky diode, research on diodes containing polymer material at the interface has increased in recent years. [19,20] In contrast, systems known today as artificial neural networks (ANNs) have started to come to the fore as an alternative way to examine the electronic parameters of Schottky diodes. [21,22] Especially with its flexible architecture and learning-based system, ANN systems can find a very important place in the future in determining the basic characteristics of these diodes with simulation data that can be created in a wide range of databased experimental studies.…”