Inorganic Low <i>k</i> Cage-molecular Crystals

Peng, Jun; Pu, Weiwen; Lu, Shengnan; Yang, Xianzhong; Wu, Chaoling; Wu, Nan; Sun, Zhiwei; Wang, Hung-Ta

doi:10.1021/acs.nanolett.0c03528

Cited by 34 publications

(46 citation statements)

References 30 publications

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“…For the 9 nm‐thick In 2 P 3 S 9 nanosheet, the calculated average E B is about 8.1 MV cm −1 , which is much larger than the breakthrough field of previously reported layered dielectrics including multilayer h ‐BN, α‐Sb 2 O 3 , etc. [ 26–29 ]…”

Section: Resultsmentioning

confidence: 99%

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Zhu

Qin

Huang

et al. 2021

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2D van der Waals (vdW) semiconductors hold great potentials for more‐than‐Moore field‐effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high‐k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high‐k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier scattering and degeneration of device performance. Here, utilizing a space‐confined epitaxy growth approach, the authors successfully obtained air‐stable ultrathin indium phosphorus sulfide (In2P3S9) nanosheets, the thickness of which can be scaled down to monolayer limit (≈0.69 nm) due to its layered structure. 2D In2P3S9 exhibits excellent insulating properties, with a high dielectric constant (≈24) and large breakdown voltage (≈8.1 MV cm−1) at room temperature. Serving as gate insulator, ultrathin In2P3S9 nanosheet can be integrated into MoS2 FETs with high‐quality dielectric/semiconductor interface, thus providing a competitive electrical performance of device with subthreshold swings (SS) down to 88 mV dec−1 and a high ON/OFF ratio of 105. This study proves an important strategy to prepare 2D vdW high‐k dielectrics, and greatly facilitates the ongoing research of 2D materials for functional electronics.

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Section: Resultsmentioning

confidence: 99%

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Zhu

Qin

Huang

et al. 2021

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“…; the other is introducing pores ( k air = 1) to decrease the density of materials. [ 4 ] The past two decades have witnessed numerous efforts that devote for reducing the k values of materials, ranging from inorganic, [ 4,10,11 ] organic‐inorganic hybrids, [ 12–17 ] to organic polymers, [ 17–23 ] and metal‐organic frameworks (MOFs). [ 24–26 ] Despite these successes, thermally and mechanically robust ultralow‐ k materials are still very scarce.…”

Section: Introductionmentioning

confidence: 99%

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

Zhou

Guo

et al. 2021

Adv Funct Materials

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Polyhedral oligomeric silsesquioxanes (POSS) are of considerable interest as building blocks for preparing low‐k materials. To date T8 POSS has been extensively investigated while the potential of larger POSS cages remain an unexplored area. Herein, the first known contribution to map the role of POSS cage size on the dielectric and other comprehensive properties of hybrid materials with identical chemical compositions is described. First, three vinyl POSS (T8, T10, and T12) species are isolated from a commercial POSS mixture. Then, they are converted to benzocyclobutene functionalized and thermo‐crosslinked hybrid materials. It is found that the cage size can strongly affect their k values, more importantly, showing a linear decrease while increasing the cage volumes (k = 2.24, 2.02, and 1.83 for c‐T8B8, c‐T10B10, and c‐T12B12, respectively). This finding highlights a profound influence of POSS cage changes on dielectric properties and could be used to predict ultralow‐k (1.5–1.1) materials by extrapolating to larger T14, T16, and T18 POSS cages. Meanwhile, varying the cage size has no obvious effect on the materials’ other properties, and all of them exhibit good comprehensive properties. Moreover, such low‐k values can persist at high temperature and high humidity conditions, which affords some promising (ultra)low‐k dielectrics for modern integrated circuit development.

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“…In order to further increase the transmission speed and higher integration of large‐scale integrated circuits, it is necessary to use low‐ k materials. The low‐ k materials must also meet the requirements of thermodynamic, mechanical, and chemical properties 5–8 …”

Section: Introductionmentioning

confidence: 99%

“…Polarizability ( α ) is an important factor affecting the k 9 . According to Clausi‐Mossotti equation, there are two main methods to reduce the k 8 . One way is to reduce the number of molecules per unit volume, porous or mesoporous materials 10 .…”

Section: Introductionmentioning

confidence: 99%

The low dielectric constant hyperbranched polycarbosilane derived resins with spacing groups

Long

Huang

et al. 2022

J of Applied Polymer Sci

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The route via the cross-linking of hyperbranched prepolymers has potential advantage to construct low dielectric constant (low-k) resins owing to the enhanced molecular free volume in hyperbranched structure. However, it is still a challenge to prepare hyperbranched resins with good film-forming property and low-k. In this paper, two hyperbranched polycarbosilanes with reactive benzocyclobutene groups were synthesized via hydrosilylation reaction to avoid the generation of Si O bonds for enabling the low polarity of chemical bonds. The spacing groups including phenyl or ethylene were incorporated into the hyperbranched structures, and the effect of the spacing groups on the physicochemical properties of hyperbranched polycarbosilane derived resins were investigated. The phenyl groups were found to effectively decrease the dielectric constant (k), while endowing the resins with good film forming ability and thermostability. The UV/thermally cured phenyl group resin owing to dual crosslinked structure, the patterns would not be deformed significantly during thermally cured process. Both hyperbranched polycarbosilane derived resins could be potential photoresists.

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Inorganic Low k Cage-molecular Crystals

Cited by 34 publications

References 30 publications

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

The low dielectric constant hyperbranched polycarbosilane derived resins with spacing groups

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Inorganic Low k Cage-molecular Crystals

Cited by 34 publications

References 30 publications

2D Indium Phosphorus Sulfide (In2P3S9): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In2P3S9): An Emerging van der Waals High‐k Dielectrics

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

The low dielectric constant hyperbranched polycarbosilane derived resins with spacing groups

Contact Info

Product

Resources

About

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics