2014
DOI: 10.1039/c3nr05882d
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Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics

Abstract: Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integr… Show more

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Cited by 61 publications
(38 citation statements)
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“…Three‐terminal field‐effect transistors (FETs) have also been proposed for artificial synapse applications . However, few FETs are reported to mimic STDP learning behaviors . Besides, although some works have been reported to simulate classic conditioning, complex device circuits, materials and structure are the key to mimic classic conditioning in these references .…”
Section: Introductionmentioning
confidence: 99%
“…Three‐terminal field‐effect transistors (FETs) have also been proposed for artificial synapse applications . However, few FETs are reported to mimic STDP learning behaviors . Besides, although some works have been reported to simulate classic conditioning, complex device circuits, materials and structure are the key to mimic classic conditioning in these references .…”
Section: Introductionmentioning
confidence: 99%
“…In addition to CNTs, oxide semiconductors have also been used as channel materials in electrolyte‐gated synaptic transistors, where indium‐zinc oxide (IZO) and indium‐gallium‐zinc oxide (IGZO) are the most widely used oxide materials . High intrinsic carrier mobility, excellent optical transparency, decent flexibility, and good compatibility with large‐area processing technologies make these metal oxides promising candidates for artificial synaptic transistors.…”
Section: Electrolyte‐gate Synaptic Transistorsmentioning
confidence: 99%
“…High intrinsic carrier mobility, excellent optical transparency, decent flexibility, and good compatibility with large‐area processing technologies make these metal oxides promising candidates for artificial synaptic transistors. Wan and co‐workers have fabricated IZO‐based electrolyte‐gated synaptic transistors with flexibility, short‐term to long‐term transition behaviors, dynamic logic and dendritic integration functions . In addition, they have also demonstrated a brain‐inspired cognitive system based on proton‐conducting graphene oxide‐coupled IZO synaptic transistor .…”
Section: Electrolyte‐gate Synaptic Transistorsmentioning
confidence: 99%
“…Recently, natural biopolymers have also been reported to act as electrolytes which can work as the gate dielectric of FETs [6,9]. Electrolytes gating plays an important role in the development of novel electronic devices [15][16][17][18][19][20][21]. at room temperature in air with a relative humidity of ~60%.…”
Section: Introductionmentioning
confidence: 99%