Inorganic semiconductor nanostructures and their field-emission applications

Fang, Xiaosheng; Bando, Yoshio; Gautam, Ujjal K.; Ye, Changhui; Golberg, Dmitri

doi:10.1039/b712874f

Cited by 608 publications

(500 citation statements)

References 195 publications

(117 reference statements)

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“…where E is the applied electric field, A = 1.54 × 10 − 6 eV V − 2 , B = 6.83 × 10 3 eV − 3/2 V μm − 1 , β is the field enhancement factor and ϕ is the work function of the emitter material (that is, 4.0 eV for SiC) 12 . The F-N plots corresponding to samples S1, S2-1 and S3-1, obtained by plotting ln(J/E 2 ) versus 1/E, are displayed in Figure 4c.…”

Section: N-dopedmentioning

confidence: 99%

“…SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters grown on rigid substrates. Particularly, the reported turn-on fields (E to , defined as the electric field required to generate a current density of 10 μA cm − 2 ) of SiC nanowires are in the range of 3.33-20 V μm − 1 , [14][15][16][17] and those of SiC nanorods and nanobelts are 13-17 V μm − 1 , 18 and 3.2 V μm − 1 , 19 respectively.…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

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Section: N-dopedmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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“…101 Besides carbon nanotubes, semiconductors have also attracted great interest in field emitters owing to their good mechanical stability, low work function, and high electrical and thermal conductivities. 102 FE properties are usually decided by the nature of the cathode materials as well as geometry and size of them. By well designing the geometry and size of cathode, for example, to introduce nanostructures on it, good FE performances have been achieved including faster turn-on time, compactness, and sustainability during the field emission compared to conventional bulky material forms.…”

Section: Field Emissionmentioning

confidence: 99%

Physical Deposition Assisted Colloidal Lithography: A Technique to Ordered Micro/Nanostructured Arrays

Li¹,

Gao²,

Duan³

et al. 2011

Advances in Unconventional Lithography

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“…Zinc sulfide (ZnS) is an important II-VI group semiconductor material, and it is a promising candidate for optoelectronic devices owing to its wide band gap for the cubic and hexagonal wurtzite phases [1,2]. It has better chemical stability than other chalcogenides, and it is widely used in many applications such as field effect transistors, transductors, sensors, optical coatings, light-emitting devices, solid-state solar cell windows, and photonic crystal devices [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Size Control of Zinc Sulfide Nanoparticles Capped by Poly(ethylene glycol)

Allehyani

Seoudi

Said

et al. 2015

Journal of Elec Materi

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Zinc sulfide nanoparticles were synthesized with controllable size via chemical precipitation. highresolution transmission electron microscopy (HRTEM) and X-ray powder diffraction (XRD) showed that the samples were grown with the cubic phase; the particle size was varied by varying the molar ratios of zinc chloride and sodium sulfide in the presence of poly(ethylene glycol). The optical band gap was calculated on the basis of ultraviolet-visible spectroscopy (UV-VIS) and ranged from 4.13 eV to 4.31 eV depending on the particle size. Surface passivation and adsorption of poly(ethylene glycol) on the nanoparticles was explained on the basis of Fourier transform infrared measurements (FTIR).

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Inorganic semiconductor nanostructures and their field-emission applications

Cited by 608 publications

References 195 publications

Highly flexible and robust N-doped SiC nanoneedle field emitters

Highly flexible and robust N-doped SiC nanoneedle field emitters

Physical Deposition Assisted Colloidal Lithography: A Technique to Ordered Micro/Nanostructured Arrays

Synthesis, Characterization, and Size Control of Zinc Sulfide Nanoparticles Capped by Poly(ethylene glycol)

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