InP-based complementary HBT amplifiers for use in communication systems

Sawdai, D.; Pavlidis, D.

doi:10.1016/s0038-1101(99)00096-9

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1999

2024

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Cited by 7 publications

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“…8) However, a bandgap discontinuity appears in the valence band, so excellent characteristics are difficult to obtain in PNP HBTs. To fabricate a PNP HBT, III-V materials can provide many options to solve the bandgap discontinuity problem, although the reported material system for PNP HBT, such as InGaAs/InP for single HBTs, 9,10) has the problems of band discontinuity in the valence band and low hole mobility to utilize symmetric PNP lateral bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

Calculation of GaInSb PNP lateral HBT for complementary bipolar logic technology

Miyamoto,

Honjyo,

Fukuda

2024

Jpn. J. Appl. Phys.

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In this study, the power consumption and speed of a GaInSb PNP lateral heterojunction bipolar transistor were estimated for applications in complementary bipolar logic circuits. At the supply voltage of 250 mV, the current gain is over 1,000, on/off power consumption ratio is approximately 180, and delay time is 2.6 ps. However, the characteristics degrade rapidly at voltages greater than 300 mV, owing to deep saturation and high-level injection.

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Section: Introductionmentioning

confidence: 99%