InP based DFB laser array integrated with MMI coupler

Zhu, Hongtu; Ma, Lingling; Liu, Song; Zhang, Can; Zhao, Lingjuan; Wang, Wei

doi:10.1007/s11431-012-5118-9

Cited by 5 publications

(4 citation statements)

References 24 publications

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“…The wavelength of the DFB laser is related to the refractive index of the active region and grating spacing, as shown in Equation (11). When fabricating a DFB laser array in which each DFB laser has a different emission wavelength, the fabrication methods can be divided into two categories: changing the grating structure and index of refraction modulation, and is represented as follows:…”

Section: Implementation Methodsmentioning

confidence: 99%

“…Therefore, if the sampling period P is carefully designed for a suitable wavelength grid and each laser section with a specific wavelength is tuned by changing the chip temperature, a wide wavelength range can be covered and the wavelength tuning can be realized simultaneously. According to Equation (11), Λ can change by changing P to achieve different output wavelengths in different lasers.…”

Section: Technical Principlementioning

confidence: 99%

See 1 more Smart Citation

Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication

et al. 2022

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Photonic integrated circuits (PICs) play a leading role in modern information and communications technology. Among the core devices in PICs is the distributed feedback (DFB) multi-wavelength semiconductor laser array. Multi-wavelength semiconductor laser arrays can be integrated on a single chip and have the advantages of high stability, good single-mode performance, and narrow line width. The wavelength tuning range has been expanded through the design of the DFB laser array, which is an ideal light source for wavelength-division multiplexing systems. The preparation of DFB laser arrays with a large number of channels, ease of mass production, and accurate emission wavelengths has become an important field of research. The connection methods of lasers in DFB laser arrays are introduced systematically and the current methods of manufacturing multi-wavelength DFB laser arrays covering the perspective of technical principles, technical advantages and disadvantages, main research progress, and research status are summarized.

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Section: Implementation Methodsmentioning

confidence: 99%

Section: Technical Principlementioning

confidence: 99%

Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication

et al. 2022

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“…DFB (Distributed feedback) semiconductor lasers are the key elements in optical communications [1][2][3][4][5][6][7][8][9][10][11]. Reconstruction equivalent chirp (REC) technique based on sampled grating has been proposed and widely studied to reduce the fabrication cost and improve the laser performances [12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Transient mode competition in directly modulated DFB semiconductor laser

Xiao

Shi

Zheng

et al. 2015

Sci. China Phys. Mech. Astron.

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A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between 1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent  phase shift (-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the 1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the 1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. DFB semiconductor laser, mode competition, relaxation oscillation, sampled grating PACS number(s): 42.55.Px, 42.60.Mi, 42.60.Rn Citation: Xiao R L, Shi Y C, Zheng J L, et al. Transient mode competition in directly modulated DFB semiconductor laser.

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“…The different lasing wavelengths are obtained either by varying the pitch of the built-in grating or by changing the waveguide′s effective refractive index from element to element. Several techniques, such as electron beam lithography [5], ridge width variation [6,7], ridge tilt [8], multiple holographic exposures [9], and sampled gratings [10], have been proposed for the fabrication of DFB laser arrays. Selective area growth (SAG) of multi-quantum wells (MQWs) by metal organic vapor phase epitaxy (MOVPE) has also been used for the fabrication of DFB laser arrays and is an attractive technology [11][12][13].…”

Section: Introductionmentioning

confidence: 99%