InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz

Quan, Wei; Arabhavi, Akshay M.; Marti, Diego; Hamzeloui, Sara; Ostinelli, O.; Bolognesi, C.R.

doi:10.1109/bcicts45179.2019.8972718

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…Nippon Telegraph and Telephone Corporation (NTT) reported transferred substrate InP/GaAsSb DHBTs with a record f T = 813 GHz [4]. Low offset/knee voltages, promising large-signal properties with over 30% power-added-efficiency (PAE) at 94 GHz [5], and superior linearity characteristics position InP/GaAsSb-based DHBTs well for submillimeter wave (mm-wave) applications [6].…”

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confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record f MAX = 1.2 THz, a simultaneous f T = 475 GHz, and BV CEO = 5.4 V. The resulting BV CEO × f MAX = 6.48 THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base-emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base-collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with f MAX ≥ 1 THz are demonstrated with emitter lengths as long as 9.4 μm and areas as high as 1.645 μm 2 . Such an area is >6× larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter-and submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/μm 2 or 1.17 mW/μm of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.

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confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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“…Whereas InP/GaAsSb DHBTs have already demonstrated attractive power performances [2], [9], the large-signal properties of quaternary-based InP/GaInAsSb DHBTs have not previously been studied: the present work characterizes quaternary (0.3 × 9) μm 2 DHBTs in the common-emitter (CE) and common-base (CB) configurations, and contrasts them to those of conventional InP/GaAsSb DHBTs with a ternary base.…”

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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

et al. 2022

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We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSbor GaInAsSb-base layers. A measured record saturated output power P OUT,SAT = 14.5 dBm with a corresponding power density 10.4 mW/μm 2 were achieved in the GaInAsSb-base CB configuration. The performance follows from i) the higher power gain in the CB topology and, ii) the superior BV CEO and BV CBO breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver P OUT,SAT = 10.6 dBm and 4.3 mW/μm 2 . For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.INDEX TERMS InP/Ga(In)AsSb, double heterojunction bipolar transistors (DHBTs), common-emitter (CE), common-base (CB), load-pull measurements, maximum output power, power gain, power density.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

Hamzeloui¹,

Ciabattini²,

Arabhavi³

et al. 2022

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz

Cited by 9 publications

References 12 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

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InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz

Cited by 9 publications

References 12 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz