InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

Bolognesi, C.R.; Flückiger, Ralf; Alexandrova, Maria; Quan, Wei; Lovblom, Rickard; Ostinelli, O.

doi:10.1109/iedm.2016.7838506

Cited by 37 publications

(17 citation statements)

References 12 publications

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“…Although the CPW test layout configuration as shown in Fig. 8 does not well resemble a uniform transmission line, similar values are obtained when applying the iterative deembedding approach following [3]. The distributed deembedding scheme can be expressed as a special case of the iterative algorithm when limiting the number of iterations to N = 2, and obtaining the weight α from 3-D EM simulations of the pad and test frame.…”

Section: B Rf Datamentioning

confidence: 64%

“…The sequence of deembedding becomes important because of the small internal capacitance of scaled-terahertz devices, being the same magnitude or smaller than the line and pad capacitance of the RF test frame. In particular, the maximum frequency of oscillation f max extrapolated from Mason's gain assumes different values for open-first and short-first deembedding, where the traditional SHORT-OPEN sequence [16] leads to an overestimation of f max , while consecutive OPEN-SHORT deembedding leads to the opposite [3].…”

Section: B Rf Datamentioning

confidence: 99%

“…As shown in Table I, we compare the results obtained from the here presented distributed deembedding to the iterative scheme proposed in [3], which exhibited convergence to the expected f max value for a transistor embedded in a pad configuration consisting of uniform lossy transmission lines leading into the DUT. The column "single pole" contains the results considering the fit of the data spanning the entire frequency range to a single-pole response.…”

Section: B Rf Datamentioning

confidence: 99%

“…T HERE has been much recent progress in the realization of millimeter wave (mm-wave) and terahertz transistors, with the indium-based compound semiconductor devices demonstrating the highest cutoff frequencies to date. Both InAs-channel high-electron-mobility transistors (HEMTs) [1] and InP/InGaAs and InP/GaAsSb heterobipolar transistors (HBTs) [2], [3] with f max around 1 THz have been reported.…”

Section: Introductionmentioning

confidence: 99%

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Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Weimann

Johansen

Stoppel

et al. 2018

IEEE Trans. Electron Devices

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We report on the realization of transferredsubstrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. Index Terms-Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeterwave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.

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Section: B Rf Datamentioning

confidence: 64%

Section: B Rf Datamentioning

confidence: 99%

Section: B Rf Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Weimann

Johansen

Stoppel

et al. 2018

IEEE Trans. Electron Devices

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“…Fig. 4(a) shows the extracted f T with the iterative de-embedding method [13] as a function of the drain current, I DS , at drain bias voltages V DS of 0.5 and 0.75 V, for the four considered InAs channel insets. Following the same approach, the extracted f MAX for a V DS of 0.5 V is represented in Fig.…”

Section: Resultsmentioning

confidence: 99%

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Ruiz

Saranovac

Han

et al. 2019

IEEE Trans. Electron Devices

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GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been parametrized in the literature. We present a systematic study of the effects of the InAs channel inset thickness on transistor characteristics and cutoff frequencies versus temperature, and on the noise performance at 300 K. The epitaxial layer structures considered here incorporate 2 to 5-nm InAs insets in a fixed total composite channel thickness. All layers exhibit excellent electron mobilities (from 40 200 to 54 800 cm 2 /Vs at 77 K). Thicker InAs insets improve both the current gain cutoff frequency (f T) and the maximum oscillation frequency (f MAX). However, they also result in higher gate leakage currents and increased channel impact ionization. 50-nm gate length pHEMTs with a 5-nm InAs inset feature the highest simultaneous f T /f MAX ≥ 390/675 (455/800) GHz at 300 (15) K for a low-noise bias but exhibit the poorest minimum noise figure NF MIN. Whereas higher f T (and/or f MAX) values have traditionally been associated with improved noise performances, this is no longer the case.

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Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Shan

Liang

Li³

et al. 2023

Circuit Theory & Apps

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SummaryThe research and development on solid‐state source generators have been making progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF energy efficiency in the millimeter‐wave (mmW) and terahertz (THz) domains. In particular, their full integration in silicon technologies, such as advanced complementary‐metal‐oxide‐semiconductor processes, has motivated the design of low cost, high performance, and miniature integrated circuits (ICs). This manuscript focuses on providing a general overview of recent progress on solid‐state signal source operating beyond 60 GHz till the THz region, from the perspective of operating principle, design metrics, state‐of‐the‐art performance, testing results, and their applications in emerging mmW/THz systems. Finally, with the use of fully integrated source generators, several design arts are highlighted to showcase the recent advances of ICs toward millimeter‐wave and THz radiation, imaging, coupled oscillator network (CON), and communication. Potential future research directions enabled by mmW/THz signal sources will be envisioned.

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InP/GaAsSb DHBTs for THz applications and improved extraction of their cutoff frequencies

Cited by 37 publications

References 12 publications

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

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