Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Abstract

We report on the realization of transferredsubstrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. Index Terms-Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeterwave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

“…Due to the highest reported RF figures-of-merit, indium phosphide (InP) based electronic technologies are well suited for signal amplification in the THz frequency regime, which has exhibited more extraordinary superiorities than Silicon-based devices in the microwave and millimeter-wave applications [7][8][9]. A variety of integration methods for heterogeneous integration of InP HBTs (heterojunction bipolar transistors) with Si CMOS have been used to realize ultrahigh-speed mixed-signal circuits: monolithic integration of InP-based transistors on Si [10], InP epitaxial transfer on top of the CMOS interconnect stack [11], fine-pitch bonding of InP chiplets on CMOS wafers [12].…”

Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors

“…A common approach to address the self-heating issue is to transfer the device onto a thermally conductive substrate like SiC. Various transferred substrate DHBTs are reported to date [23,[74][75][76]. Although the overall thermal conductivity of the device is improved, the maximum oscillation cut-off frequency f MAX and the breakdown voltages are lower than the standard DHBTs due to process-related issues and difficulty in scaling.…”

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

“…Due to the high cut-off frequency of indium phosphide (InP) based heterojunction transistors with f max above 1 THz exhibiting compelling advantages over Si in microwave, millimeter-wave applications [7,8], much effort has been made to integrate InP-based devices on Si wafer to realize ultrahigh-speed mixed-signal circuits [9][10][11]. First and foremost, high-quality InP films or chips need to be integrated on Si substrates.…”