InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Bhat, R.; Hong, Wonbin; Caneau, C.; Koza, M.A.; Nguyen, C.; Goswami, Subrata

doi:10.1063/1.116120

Cited by 58 publications

(16 citation statements)

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“…The mobility of nearly lattice matched GaAs 0.94 Sb 0.05 N 0.01 at 300 K was measured to be 350 cm 2 /V-s with 1.0E17/cm 3 background hole concentrations and the mobility at 77 K was 1220 cm 2 /V-s with a background hole concentration of 4.8E16/cm 3 . Interestingly, GaAsSb mobilities nearly lattice matched to InP are much lower than this at o70 cm 2 /V-s [18][19][20] and this has been attributed to alloy scattering and ordering effects. An estimate of the carrier masses may be obtained by plotting the 4 K PL energy as a function of the inverse of the well width squared.…”

Section: 4-34 â Greater Than That Of the Gaassbmentioning

confidence: 96%

OMVPE of GaAsSbN for long wavelength emission on GaAs

Peake

Waldrip

Hargett

et al. 2004

Journal of Crystal Growth

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Section: 4-34 â Greater Than That Of the Gaassbmentioning

confidence: 96%

OMVPE of GaAsSbN for long wavelength emission on GaAs

Peake

Waldrip

Hargett

et al. 2004

Journal of Crystal Growth

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“…It has not yet been clarified, however, whether carbon acceptors in carbon-doped GaAsSb grown by MOCVD are passivated by hydrogen [10] or not [2,3]. We investigated hydrogen passivation in carbon-doped GaAsSb grown by MOCVD and found that some of the carbon acceptors in the GaAsSb were passivated by hydrogen atoms incorporated during MOCVD growth.…”

Section: Introductionmentioning

confidence: 99%

“…(2) There is no potential barrier at the base/collector interface without step or continuously graded layers. Additionally, heavily doped p-GaAsSb can be achieved by carbon doping.…”

Section: Introductionmentioning

confidence: 99%

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Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Oda

Watanabe

Uchida

et al. 2004

Journal of Crystal Growth

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“…This is followed by utilization of two selective wet etches and one dry etch with a high verticality. The first etch is HCl:H3PO4:H2O (16:7:4) at 5°C, which selectively etches InP (&InAlAs) versus InGaAs/GaAsSb (Bhat et al, 1996). The second selective etch removes InGaAs (&GaAsSb) versus InP (Stano, 1987).…”

Section: Fabrication Processmentioning

confidence: 99%

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

2016

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Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels, and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status, and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays (FPAs) for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time in 2007. It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. This together with the feedback stabilized gain mechanism, makes formation of large-format high pixel density electr on-injection FPAs less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system and has a cutoff wavelength of 1700 nm. The layer structure consists of 500 nm InP injector/50 nm InAlAs etch stop/50 nm GaAsSb electron barrier (and hole trap)/1 μm InGaAs absorber. The epitaxial layers are grown on InP substrates. Electron-injection detector takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. EI detectors have been designed, fabricated, and tested during two generations of development and optimization cycles. We review our imager results using the firstgeneration detectors. In the second-generation devices, the dark current is reduced by two orders of magnitude, and bandwidth is improved by four orders of magnitude. The dark current density of the second-generation EI detector is shown to outperform the stateof-the-art technology, the SWIR HgCdTe eAPD by more than one order of magnitude. We demonstrate a performance comparison with other SWIR detector technologies with internal amplification and show that the electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature. Second-generation devices provide high-speed response ~6 ns rise time, low jitter ~12 ps, high amplification of more than FiGURe 1 | The trend in noise reduction for state-of-the-art SwiR imaging arrays with cutoff wavelength (λc) ~1-1.5 μm over the past 30 years: the equivalent input noise of the ROiC determines the ...

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InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Cited by 58 publications

References 0 publications

OMVPE of GaAsSbN for long wavelength emission on GaAs

OMVPE of GaAsSbN for long wavelength emission on GaAs

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Advances on Sensitive Electron-Injection Based Cameras for Low-Flux, Short-Wave Infrared Applications

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